Quantum oscillations of resistivity in bismuth nanowires

We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Физика низких температур
Datum:2010
Hauptverfasser: Condrea, E., Gilewski, A.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2010
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/116969
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-116969
record_format dspace
spelling Condrea, E.
Gilewski, A.
2017-05-18T16:23:52Z
2017-05-18T16:23:52Z
2010
Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ.
0132-6414
PACS: 73.63.Nm, 73.90.+f
https://nasplib.isofts.kiev.ua/handle/123456789/116969
We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Наноструктуры при низких температурах
Quantum oscillations of resistivity in bismuth nanowires
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Quantum oscillations of resistivity in bismuth nanowires
spellingShingle Quantum oscillations of resistivity in bismuth nanowires
Condrea, E.
Gilewski, A.
Наноструктуры при низких температурах
title_short Quantum oscillations of resistivity in bismuth nanowires
title_full Quantum oscillations of resistivity in bismuth nanowires
title_fullStr Quantum oscillations of resistivity in bismuth nanowires
title_full_unstemmed Quantum oscillations of resistivity in bismuth nanowires
title_sort quantum oscillations of resistivity in bismuth nanowires
author Condrea, E.
Gilewski, A.
author_facet Condrea, E.
Gilewski, A.
topic Наноструктуры при низких температурах
topic_facet Наноструктуры при низких температурах
publishDate 2010
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/116969
citation_txt Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ.
work_keys_str_mv AT condreae quantumoscillationsofresistivityinbismuthnanowires
AT gilewskia quantumoscillationsofresistivityinbismuthnanowires
first_indexed 2025-12-07T18:28:31Z
last_indexed 2025-12-07T18:28:31Z
_version_ 1850875169025818624