The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze...
Saved in:
| Published in: | Физика низких температур |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117016 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117016 |
|---|---|
| record_format |
dspace |
| spelling |
Yildiz, A. Kasap, M. 2017-05-19T08:21:31Z 2017-05-19T08:21:31Z 2010 The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. 0132-6414 PACS: 72.20.My, 72.20.Fr, 72.80.Ey https://nasplib.isofts.kiev.ua/handle/123456789/117016 Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T⁻¹.⁶³, suggesting that electron–electron interactions are dominant. We would like to thank Dr. Mateo Bosi for providing the InGaN sample. This work is supported by the State of Planning Organization of Turkey under Grant No. 2001K120590. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Квантовые эффекты в полупpоводниках и диэлектриках The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| spellingShingle |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE Yildiz, A. Kasap, M. Квантовые эффекты в полупpоводниках и диэлектриках |
| title_short |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_full |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_fullStr |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_full_unstemmed |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE |
| title_sort |
temperature dependence of the inelastic scattering time in ingan grown by movpe |
| author |
Yildiz, A. Kasap, M. |
| author_facet |
Yildiz, A. Kasap, M. |
| topic |
Квантовые эффекты в полупpоводниках и диэлектриках |
| topic_facet |
Квантовые эффекты в полупpоводниках и диэлектриках |
| publishDate |
2010 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T⁻¹.⁶³, suggesting that electron–electron interactions are dominant.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117016 |
| citation_txt |
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ. |
| work_keys_str_mv |
AT yildiza thetemperaturedependenceoftheinelasticscatteringtimeiningangrownbymovpe AT kasapm thetemperaturedependenceoftheinelasticscatteringtimeiningangrownbymovpe AT yildiza temperaturedependenceoftheinelasticscatteringtimeiningangrownbymovpe AT kasapm temperaturedependenceoftheinelasticscatteringtimeiningangrownbymovpe |
| first_indexed |
2025-12-07T20:58:17Z |
| last_indexed |
2025-12-07T20:58:17Z |
| _version_ |
1850884591199453184 |