Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond
Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe⁺ ion implanted diamond is presented. The Xe-related...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2010 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117031 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond / Y. Deshko, A.A. Gorokhovsky // Физика низких температур. — 2010. — Т. 36, № 5. — С. 579–586. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862614758616727552 |
|---|---|
| author | Deshko, Y. Gorokhovsky, A.A. |
| author_facet | Deshko, Y. Gorokhovsky, A.A. |
| citation_txt | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond / Y. Deshko, A.A. Gorokhovsky // Физика низких температур. — 2010. — Т. 36, № 5. — С. 579–586. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe⁺ ion implanted diamond is presented. The Xe-related center is of particular interest as this center is one of a few centers (Ni, Si, Cr) in diamond having sharp emission lines in the infrared spectral region, specifically at 813 and 794 nm. The paper discusses an approach to determine an important and difficult to measure conversion efficiency of implanted ions into emitting optical centers. The method uses a micro-luminescence confocal mapping and statistical analysis based on a compound Poisson distribution, accounting for both the implanted centers and the optically excited centers statistics. Results of numerical simulations and experimental measurements are presented.
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| first_indexed | 2025-11-29T11:56:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117031 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| isbn | PACS: 78.55.–m, 73.20.Hb |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-29T11:56:46Z |
| publishDate | 2010 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Deshko, Y. Gorokhovsky, A.A. 2017-05-19T08:54:44Z 2017-05-19T08:54:44Z 2010 Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond / Y. Deshko, A.A. Gorokhovsky // Физика низких температур. — 2010. — Т. 36, № 5. — С. 579–586. — Бібліогр.: 26 назв. — англ. PACS: 78.55.–m, 73.20.Hb 0132-6414 https://nasplib.isofts.kiev.ua/handle/123456789/117031 Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe⁺ ion implanted diamond is presented. The Xe-related center is of particular interest as this center is one of a few centers (Ni, Si, Cr) in diamond having sharp emission lines in the infrared spectral region, specifically at 813 and 794 nm. The paper discusses an approach to determine an important and difficult to measure conversion efficiency of implanted ions into emitting optical centers. The method uses a micro-luminescence confocal mapping and statistical analysis based on a compound Poisson distribution, accounting for both the implanted centers and the optically excited centers statistics. Results of numerical simulations and experimental measurements are presented. The authors thank Dr. A. Zaitsev for thermal annealing of the samples and useful discussions, Dr. Mengbing Huang for ion implantations, and Mrs. A. Bergman for participation in some measurements. The work was supported in part by PSC/CUNY. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Nanostructures and Impurity Centers in Cryogenic Environment Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond Article published earlier |
| spellingShingle | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond Deshko, Y. Gorokhovsky, A.A. Nanostructures and Impurity Centers in Cryogenic Environment |
| title | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond |
| title_full | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond |
| title_fullStr | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond |
| title_full_unstemmed | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond |
| title_short | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond |
| title_sort | spectroscopy and micro-luminescence mapping of xe-implanted defects in diamond |
| topic | Nanostructures and Impurity Centers in Cryogenic Environment |
| topic_facet | Nanostructures and Impurity Centers in Cryogenic Environment |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117031 |
| work_keys_str_mv | AT deshkoy spectroscopyandmicroluminescencemappingofxeimplanteddefectsindiamond AT gorokhovskyaa spectroscopyandmicroluminescencemappingofxeimplanteddefectsindiamond |