Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond
Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe⁺ ion implanted diamond is presented. The Xe-related...
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| Published in: | Физика низких температур |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117031 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond / Y. Deshko, A.A. Gorokhovsky // Физика низких температур. — 2010. — Т. 36, № 5. — С. 579–586. — Бібліогр.: 26 назв. — англ. |