Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond

• Published in: Физика низких температур
• Date: 2010
• Main Authors: Deshko, Y., Gorokhovsky, A.A.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2010
• Subjects: Nanostructures and Impurity Centers in Cryogenic Environment
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117031
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond / Y. Deshko, A.A. Gorokhovsky // Физика низких температур. — 2010. — Т. 36, № 5. — С. 579–586. — Бібліогр.: 26 назв. — англ.

Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe⁺ ion implanted diamond is presented. The Xe-related...