Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions

• Veröffentlicht in: Физика низких температур
• Datum: 2012
• ISSN: 0132-6414
• 1. Verfasser: Latyshev, Yu.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2012
• Schlagworte: Квантовые когерентные эффекты в сверхпроводниках и новые материалы
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117126
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Comparison of phase slippage processes in Josephson
 junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ.

We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density
 wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period
 T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage
 on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the
 weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage
 increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing
 1/L follows the analog of Josephson equation vF/L = 2eV/h.