Superconducting properties of a boson-exchange model of doped graphene

We study the superconducting properties of a doped one-layer graphene by using a model in which the interparticle attraction is caused by a boson (phonon-like) excitations. We study the dependencies of the superconducting gap D and the mean-field critical temperature TcMF on the carrier density, att...

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Published in:Физика низких температур
Date:2009
Main Authors: Loktev, V.M., Turkowski, V.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2009
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117304
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Superconducting properties of a boson-exchange model of doped graphene / V.M. Loktev, V. Turkowski // Физика низких температур. — 2009. — Т. 35, № 8-9. — С. 805-811. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117304
record_format dspace
spelling Loktev, V.M.
Turkowski, V.
2017-05-21T19:27:14Z
2017-05-21T19:27:14Z
2009
Superconducting properties of a boson-exchange model of doped graphene / V.M. Loktev, V. Turkowski // Физика низких температур. — 2009. — Т. 35, № 8-9. — С. 805-811. — Бібліогр.: 20 назв. — англ.
0132-6414
Pacs: 74.20.–z, 74.78.–w, 74.40. +k, 73.63.–b
https://nasplib.isofts.kiev.ua/handle/123456789/117304
We study the superconducting properties of a doped one-layer graphene by using a model in which the interparticle attraction is caused by a boson (phonon-like) excitations. We study the dependencies of the superconducting gap D and the mean-field critical temperature TcMF on the carrier density, attraction strength and the characteristic (Debye) bosonic frequency. In addition, we study the temperature-carrier density phase diagram of the model by taking into account the thermal fluctuations of the order parameter. We show that the fluctuations result in a significant suppression of TcMF, such that the real (Berezinskii– Kosterlitz–Thouless) critical temperature Tc is much lower than TcMF. The region Tc < T < TcMF is characterized by a finite density of states at the Fermi level (the pseudogap phase). We show that the width of the temperature interval of the pseudogap phase strongly depends on the model parameters—carrier concentration, attraction amplitude, and boson frequency.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Электронные свойства проводящих систем
Superconducting properties of a boson-exchange model of doped graphene
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Superconducting properties of a boson-exchange model of doped graphene
spellingShingle Superconducting properties of a boson-exchange model of doped graphene
Loktev, V.M.
Turkowski, V.
Электронные свойства проводящих систем
title_short Superconducting properties of a boson-exchange model of doped graphene
title_full Superconducting properties of a boson-exchange model of doped graphene
title_fullStr Superconducting properties of a boson-exchange model of doped graphene
title_full_unstemmed Superconducting properties of a boson-exchange model of doped graphene
title_sort superconducting properties of a boson-exchange model of doped graphene
author Loktev, V.M.
Turkowski, V.
author_facet Loktev, V.M.
Turkowski, V.
topic Электронные свойства проводящих систем
topic_facet Электронные свойства проводящих систем
publishDate 2009
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We study the superconducting properties of a doped one-layer graphene by using a model in which the interparticle attraction is caused by a boson (phonon-like) excitations. We study the dependencies of the superconducting gap D and the mean-field critical temperature TcMF on the carrier density, attraction strength and the characteristic (Debye) bosonic frequency. In addition, we study the temperature-carrier density phase diagram of the model by taking into account the thermal fluctuations of the order parameter. We show that the fluctuations result in a significant suppression of TcMF, such that the real (Berezinskii– Kosterlitz–Thouless) critical temperature Tc is much lower than TcMF. The region Tc < T < TcMF is characterized by a finite density of states at the Fermi level (the pseudogap phase). We show that the width of the temperature interval of the pseudogap phase strongly depends on the model parameters—carrier concentration, attraction amplitude, and boson frequency.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/117304
citation_txt Superconducting properties of a boson-exchange model of doped graphene / V.M. Loktev, V. Turkowski // Физика низких температур. — 2009. — Т. 35, № 8-9. — С. 805-811. — Бібліогр.: 20 назв. — англ.
work_keys_str_mv AT loktevvm superconductingpropertiesofabosonexchangemodelofdopedgraphene
AT turkowskiv superconductingpropertiesofabosonexchangemodelofdopedgraphene
first_indexed 2025-12-07T18:37:17Z
last_indexed 2025-12-07T18:37:17Z
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