Superconducting properties of a boson-exchange model of doped graphene
We study the superconducting properties of a doped one-layer graphene by using a model in which the interparticle attraction is caused by a boson (phonon-like) excitations. We study the dependencies of the superconducting gap D and the mean-field critical temperature TcMF on the carrier density, att...
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| Veröffentlicht in: | Физика низких температур |
|---|---|
| Datum: | 2009 |
| Hauptverfasser: | Loktev, V.M., Turkowski, V. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2009
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117304 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Superconducting properties of a boson-exchange model of doped graphene / V.M. Loktev, V. Turkowski // Физика низких температур. — 2009. — Т. 35, № 8-9. — С. 805-811. — Бібліогр.: 20 назв. — англ. |
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