Oscillatory regularity of charge carrier traps energy spectra in silicon organic polymer poly(di-n-hexylsilane)

• Опубліковано в: : Физика низких температур
• Дата: 2012
• Автори: Gumenjuk, A., Ostapenko, N., Ostapenko, Yu., Kerita, O., Suto, S., Watanabe, A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2012
• Теми: Low Temperature Spectroscopy and Radiation Effects
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117427
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Oscillatory regularity of charge carrier traps energy
 spectra in silicon organic polymer poly(di-n-hexylsilane) / A. Gumenjuk, N. Ostapenko, Yu. Ostapenko, O. Kerita, S. Suto, A. Watanabe // Физика низких температур. — 2012. — Т. 38, № 8. — С. 932-937. — Бібліогр.: 25 назв. — англ.

Charge carrier traps energy spectra have been investigated in silicon organic polymer poly(di-n-hexylsilane)
 by fractional thermally stimulated luminescence in the temperature range from 5 to 200 K. The energy spectrum
 of traps has been found to be discrete in nature, not the quasi-continuous, as it was considered earlier. It has been
 established that the traps energies form two characteristic series resulting from the vibrational quanta at 373 and
 259 cm⁻¹, respectively. It is important that these vibrational quanta coincide with the frequencies of the totally
 symmetric vibrational modes of silicon chain which are active in Raman spectrum. The regularities mentioned
 are analyzed using the oscillatory traps model as the basis.