Impurity and vacancy effects in graphene
A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in this system is demonstrated, compared to those in well known doped semicondu...
Saved in:
| Date: | 2012 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2012
|
| Series: | Физика низких температур |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117436 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Impurity and vacancy effects in graphene / V.M. Loktev, Yu.G. Pogorelov // Физика низких температур. — 2012. — Т. 38, № 8. — С. 993-1000. — Бібліогр.: 33 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117436 |
|---|---|
| record_format |
dspace |
| fulltext |
|
| spelling |
nasplib_isofts_kiev_ua-123456789-1174362025-02-09T11:26:27Z Impurity and vacancy effects in graphene Loktev, V.M. Pogorelov, Yu.G. Low Temperature Spectroscopy and Radiation Effects A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in this system is demonstrated, compared to those in well known doped semiconductors, and explained in terms of conical singularities in the band spectrum of pure graphene. The criteria for appearance of localized states on clusters of impurity scatterers and for qualitative restructuring of band spectrum are established and a possibility for a specific metal/insulator transition at presence of vacancies is indicated. Y.P. thanks V.A. Miransky, J.P. Carbotte and S.G. Sharapov for very useful discussions of disorder effects in graphene, and kind hospitality by the Department of Applied Mathematics of University of Western Ontario during his sabbatical stay there, when this work was initiated. The support from Portuguese Fundação para a Ciência e a Tecnologia is gratefully acknowledged. V.L. thanks the SCOPES grant and also the Special Program of fundamental researches by Physics and Astronomy Department of NAS of Ukraine for the partial support. 2012 Article Impurity and vacancy effects in graphene / V.M. Loktev, Yu.G. Pogorelov // Физика низких температур. — 2012. — Т. 38, № 8. — С. 993-1000. — Бібліогр.: 33 назв. — англ. 0132-6414 PACS: 03.65.Pm, 71.30.+h, 71.55.–i https://nasplib.isofts.kiev.ua/handle/123456789/117436 en Физика низких температур application/pdf Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Low Temperature Spectroscopy and Radiation Effects Low Temperature Spectroscopy and Radiation Effects |
| spellingShingle |
Low Temperature Spectroscopy and Radiation Effects Low Temperature Spectroscopy and Radiation Effects Loktev, V.M. Pogorelov, Yu.G. Impurity and vacancy effects in graphene Физика низких температур |
| description |
A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence
of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in
this system is demonstrated, compared to those in well known doped semiconductors, and explained in terms of
conical singularities in the band spectrum of pure graphene. The criteria for appearance of localized states on
clusters of impurity scatterers and for qualitative restructuring of band spectrum are established and a possibility
for a specific metal/insulator transition at presence of vacancies is indicated. |
| format |
Article |
| author |
Loktev, V.M. Pogorelov, Yu.G. |
| author_facet |
Loktev, V.M. Pogorelov, Yu.G. |
| author_sort |
Loktev, V.M. |
| title |
Impurity and vacancy effects in graphene |
| title_short |
Impurity and vacancy effects in graphene |
| title_full |
Impurity and vacancy effects in graphene |
| title_fullStr |
Impurity and vacancy effects in graphene |
| title_full_unstemmed |
Impurity and vacancy effects in graphene |
| title_sort |
impurity and vacancy effects in graphene |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2012 |
| topic_facet |
Low Temperature Spectroscopy and Radiation Effects |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117436 |
| citation_txt |
Impurity and vacancy effects in graphene / V.M. Loktev, Yu.G. Pogorelov // Физика низких температур. — 2012. — Т. 38, № 8. — С. 993-1000. — Бібліогр.: 33 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT loktevvm impurityandvacancyeffectsingraphene AT pogorelovyug impurityandvacancyeffectsingraphene |
| first_indexed |
2025-11-25T21:20:34Z |
| last_indexed |
2025-11-25T21:20:34Z |
| _version_ |
1849798829349535744 |