Local heating method for growth of aligned carbon nanotubes at low ambient temperature

We use a highly localised resistive heating technique to grow vertically aligned multiwalled nanotube
 films and aligned single-walled nanotubes on substrates with an average temperature of less than 100°C. The
 temperature at the catalyst can easily be as high as 1000 °C but an extr...

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Veröffentlicht in:Физика низких температур
Datum:2008
Hauptverfasser: Dittmer, S., Mudgal, S., Nerushev, O.A., Campbell, E.E.B.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2008
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117563
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Local heating method for growth of aligned carbon nanotubes at low ambient temperature 
 / S. Dittmer, S. Mudgal, O.A. Nerushev, E.E.B. Campbell
 // Физика низких температур. — 2008. — Т. 34, № 10. — С. 1058-1062. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:We use a highly localised resistive heating technique to grow vertically aligned multiwalled nanotube
 films and aligned single-walled nanotubes on substrates with an average temperature of less than 100°C. The
 temperature at the catalyst can easily be as high as 1000 °C but an extremely high temperature gradient
 ensures that the surrounding chip is held at much lower temperatures, even as close as 1μm away from the
 local heater. We demonstrate the influence of temperature on the height of multi-walled nanotube films,
 illustrate the feasibility of sequential growth of single-walled nanotubes by switching between local heaters
 and also show that nanotubes can be grown over temperature sensitive materials such as resist polymer.
ISSN:0132-6414