Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Author: Korotyeyev, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117598
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of THz-electromagnetic wave transmission
 through the GaN films under conditions of cyclotron
 and optical phonon transit-time resonances / V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 18-26. — Бібліогр.: 16 назв. — англ.

The theory of THz radiation transmission through the film of compensated
 GaN of cubic modification under action of electric and magnetic fields has been
 developed. In the THz frequency range, spectra of the dynamic mobility tensor have been
 obtained for applied steady-state electric fields of several kV/cm and magnetic fields of
 several T. The spectra of transmission, reflection and loss coefficients have been
 analyzed for the Voigt configuration used for the applied fields. It has been shown that
 the transmitted wave becomes elliptically polarized, and the spectra of polarization
 characteristics such as ellipticity and rotation angle of the large axis of polarization
 ellipse were investigated under conditions of cyclotron resonance and optical phonon
 transit-time one. It has been found that, in certain frequency bands, polarization
 characteristics have the features valid for both resonances. The new optical method based
 on the analysis of ellipticity and rotation angle spectra is offered for determination of the
 low-field mobility.