Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements
Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, and Ge₉.₅As₂₈.₆S₆₁.₉, respectively, were studied using the Raman spectr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117599 |
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| Cite this: | Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 27-36. — Бібліогр.: 63 назв. — англ. |
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Kavetskyy, T.S. 2017-05-25T15:29:24Z 2017-05-25T15:29:24Z 2013 Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 27-36. — Бібліогр.: 63 назв. — англ. 1560-8034 PACS 61.43.Fs, 61.80.Ed, 78.30.Ly https://nasplib.isofts.kiev.ua/handle/123456789/117599 Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, and Ge₉.₅As₂₈.₆S₆₁.₉, respectively, were studied using the Raman spectroscopy technique in detail. The polarized (VV) and depolarized (VH) Raman spectra were recorded separately for two identical samples in the unirradiated and γ-irradiated states which allowed performing all measurements under the same experimental conditions. The Raman spectra were considered in the regions of high-frequency excitations related with the molecular peak, and low-frequency excitations related with the boson peak. The depolarization ratio spectra for the unirradiated and y-irradiated samples were examined, too. The differential Raman spectra in the high-frequency region between unirradiated and y-irradiated samples were obtained only in the VH configuration, since no spectral variations in the VV configuration were detected for all the compositions studied. Employing the differential representation (Rirrad - IRunirrad.) of the VH Raman spectra measured for the y-irradiated ( IRirrad. ) and unirradiated ( IRunirrad. ) samples, it has been found out that the radiation-induced structural changes are significant only for the glass composition with x = 0.4, while these changes are practically absent in the case of the glass compositions with x = 0.1, 0.2, and 0.6. The applied differential procedure allows also to detect the radiation-induced effects in clusters of corner-shared and edge-shared tetrahedral, which was not possible with IR Fast Fourier Transform spectroscopy due to different activity of IR and Raman bands. In addition, it was shown that the controversial companion Ac₁ mode at 370 cm⁻¹ to the main 340 cm⁻¹ A₁ symmetric mode of vibrations in cornershared tetrahedra seems to be related mainly to the vibrations of edge-shared tetrahedra. The possible nanoscale structural mechanism to account for these spectral changes has been discussed. The author would like to thank Prof. C. Raptis (National Technical University of Athens (NTUA), Greece) for kindly provided equipment to conduct Raman scattering studies and for his hospitality during his stay at the Physics Department of NTUA supported by the Greek State Scholarships Foundation (I.K.Y.) and Prof. V.M. Tsmots (Ivan Franko Drohobych State Pedagogical University (DSPU), Ukraine) for stimulating discussions. The investigated samples used for measurements were prepared within joint research projects (#0106U007386 and #0109U007446c) between DSPU (Drohobych, Ukraine) and Scientific Research Company “Carat” (Lviv, Ukraine) supported by the Ministry of Education and Science of Ukraine (#0106U007385 and #0109U007445). Support of the Ministry of Education and Science, Youth and Sport of Ukraine (#0111U001021) and the State Fund for Fundamental Researches of Ukraine (#F40.2/019) is also gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements |
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Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements Kavetskyy, T.S. |
| title_short |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements |
| title_full |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements |
| title_fullStr |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements |
| title_full_unstemmed |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements |
| title_sort |
radiation-induced structural changes in chalcogenide glasses as revealed from raman spectroscopy measurements |
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Kavetskyy, T.S. |
| author_facet |
Kavetskyy, T.S. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Article |
| description |
Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, and Ge₉.₅As₂₈.₆S₆₁.₉, respectively, were studied using the Raman spectroscopy technique in detail. The polarized (VV) and depolarized (VH) Raman spectra were recorded separately for two identical samples in the unirradiated and γ-irradiated states which allowed performing all measurements under the same experimental conditions. The Raman spectra were considered in the regions of high-frequency excitations related with the molecular peak, and low-frequency excitations related with the boson peak. The depolarization ratio spectra for the unirradiated and y-irradiated samples were examined, too. The differential Raman spectra in the high-frequency region between unirradiated and y-irradiated samples were obtained only in the VH configuration, since no spectral variations in the VV configuration were detected for all the compositions studied. Employing the differential representation (Rirrad - IRunirrad.) of the VH Raman spectra measured for the y-irradiated ( IRirrad. ) and unirradiated ( IRunirrad. ) samples, it has been found out that the radiation-induced structural changes are significant only for the glass composition with x = 0.4, while these changes are practically absent in the case of the glass compositions with x = 0.1, 0.2, and 0.6. The applied differential procedure allows also to detect the radiation-induced effects in clusters of corner-shared and edge-shared tetrahedral, which was not possible with IR Fast Fourier Transform spectroscopy due to different activity of IR and Raman bands. In addition, it was shown that the controversial companion Ac₁ mode at 370 cm⁻¹ to the main 340 cm⁻¹ A₁ symmetric mode of vibrations in cornershared tetrahedra seems to be related mainly to the vibrations of edge-shared tetrahedra. The possible nanoscale structural mechanism to account for these spectral changes has been discussed.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117599 |
| citation_txt |
Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 27-36. — Бібліогр.: 63 назв. — англ. |
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AT kavetskyyts radiationinducedstructuralchangesinchalcogenideglassesasrevealedfromramanspectroscopymeasurements |
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2025-12-07T19:58:59Z |
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2025-12-07T19:58:59Z |
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1850880860620849152 |