Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Author: Kavetskyy, T.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117599
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation-induced structural changes in chalcogenide glasses as
 revealed from Raman spectroscopy measurements / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 27-36. — Бібліогр.: 63 назв. — англ.

Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, and Ge₉.₅As₂₈.₆S₆₁.₉, respectively, were studied using the Raman spectr...