Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells
Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117601 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells / V.V. Brus, P.D. Maryanchuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 37-42. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at the TiO₂/CdTe heterojunction interface was taken into consideration. The width W of the space charge region of the CdTe-pTiO₂-n solar cells and consequently the concentration of uncompensated acceptors NA - ND were determined using the open-circuit method.
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| ISSN: | 1560-8034 |