Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells
Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Цитувати: | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells / V.V. Brus, P.D. Maryanchuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 37-42. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859938570918166528 |
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| author | Brus, V.V. Maryanchuk, P.D. Parfenyuk, O.A. Vakhnyak, N.D. |
| author_facet | Brus, V.V. Maryanchuk, P.D. Parfenyuk, O.A. Vakhnyak, N.D. |
| citation_txt | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells / V.V. Brus, P.D. Maryanchuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 37-42. — Бібліогр.: 23 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at the TiO₂/CdTe heterojunction interface was taken into consideration. The width W of the space charge region of the CdTe-pTiO₂-n solar cells and consequently the concentration of uncompensated acceptors NA - ND were determined using the open-circuit method.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
PACS 71.55.Gs, 73.40.Lq
Photoelectrical analysis of n-TiO2/p-CdTe heterojunction solar cells
V.V. Brus1, P.D. Maryanchuk1, O.A. Parfenyuk1, N.D. Vakhnyak2
1Yu. Fedkovych Chernivtsi National University, Department of Electronics and Energy Engineering,
2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine; e-mail: victorbrus@mail.ru
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: div47@isp.kiev.ua
Abstract. Photoelectrical properties of n-TiO2/p-CdTe heterojunction solar cells were
investigated under different light conditions, taking into account the presence of series
and shunt resistances. The effect of light dependent dominating charge transport
mechanism based on tunnel-recombination processes at the TiO2/CdTe heterojunction
interface was taken into consideration. The width W of the space charge region of the
CdTe-pTiO-n 2 solar cells and consequently the concentration of uncompensated
acceptors were determined using the open-circuit method. DA NN
Keywords: TiO2, CdTe, heterojunction, solar cell.
Manuscript received 22.10.12; revised version received 27.11.12; accepted for
publication 26.01.13; published online 28.02.13.
1. Introduction
CdTe-based heterojunction solar cells are very
prospective due to their optimal photoelectrical
characteristics for highly efficient solar energy
conversion. It is known that CdS/CdTe solar cells are the
most studied among promising CdTe-based solar cells
[1–7]. However, wide band gap conductive metal
oxides/CdTe heterojunctions become very attractive due
to the wide spectral range of their photosensitivity. In
particular, a number of research gropes have shown that
anisotype heterojunctions CdTe-pTiO-n 2 are
prospective for application in photovoltaics, in spite of
some drawbacks resulted from non-optimal conduction
bands alignment and recombination at the TiO2/CdTe
heterojunction interface [8–12].
In our previous works [12, 13] the detailed
investigation of electrical properties of
CdTe-pTiO-n 2 heterojunctions was carried out
under dark and different light conditions. The
dominating current transport mechanisms through the
heterojunctions were established under dark conditions
as well as their light dependence was shown. However,
there was not paid enough attention to the analysis of
their photoelectrical properties, which are very important
for photovoltaic devices.
This paper reports the results of a detail
investigation of the photoelectrical properties of
CdTe-pTiO-n 2 heterojunction solar cells in the
scope of the generally accepted equivalent circuit in the
presence of series and shunt resistance. The effect of the
dominating light dependent tunnel-recombination
current transport mechanism at forward biases will be
taken into consideration. The width of the space charge
region W and thus the concentration of uncompensated
acceptors DA NN will be determined using the
technique based on the open-circuit analysis of
heterojunction solar cells under monochromatic
illumination [14].
2. Experimental methods
The fabrication of n-TiO2/p-CdTe heterojunction solar
cells was carried out by means of the pure TiO2 thin
films deposition (σ = and n =
at 295 K) onto freshly cleaved CdTe
single crystal substrates with dimensions 541 mm
11cm77.0
317 cm108.4
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
37
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
(σ = and p = at 295 K)
by means of the DC reactive magnetron sputtering.
Simultaneously, the TiO2 thin film was deposited onto a
quartz substrate in order to measure its transmittance and
electric properties.
112 cm109.8 315cm102.7
The frontal electric contact to the solar cells was
prepared by thermal evaporation of indium. The back
electric contact was fabricated by successive deposition
of gold and cupper layers onto the previously laser
treated back surface of CdTe substrate.
More detailed description of the technological
conditions of the
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
CdTe het
omatic light (λ =
-p2
onochr 650 nm,
Iopt
sem
film
was
T-n erojunction solar
cells fabrication can be found in our previous work [12].
The so
iO
urces of m
2cm ), use
iconductor l
= 2cmmW6 ) and white light (Iopt =
mW100 d in our study, were a
aser and halogen lamp, respectively. A
water filter was used in order to prevent the heating of
the heterojunctions under white light illumination.
The transmission spectrum of the TiO2 thin
measured by means of a conventional
spectrophotometer (SF-2000). The VI characteristics
of the CdTe-pTiO-n 2 solar cells were measured
using a S 286, SI 1255 complex. OLARTRON SI 1
3. Results and discussion
As was mentioned abov of the e, the analysis
CdTe-pTiO-n 2 solar cells will be carried out in the
uivalent circuit which takes into
consideration the presence of series Rs and shunt Rsh
resistance (Fig. 1). The external current I is given as:
shdph IIII , where Iph is the photocurrent, Id is the
d Ish is the current through the shunt
resistance Rsh.
The da
scope of the eq
diode current an
rk VI characteristics of the
CdTe-piO2 h junction solar cells measured
eratures were analyzed in order to
determine the expression for the diode current Id [12].
Fig. 2 shows the forward branches of the dark VI
Fig. 1. The equivalent circuit of n-TiO2/p-CdTe solar cells.
Fig. 2. The dark I–V characteristics of the n-TiO2/p-CdTe
heterojunction solar cells in the semilogarithmic scale: 1 –
295 K, 2 – 309 K, 3 – 318 K, 4 – 329 K, 5 – 350 K.
sd IRVqBI 00exp , (1)
where the coefficient α0 =
the slope of the linear segments the coefficient B =
the curre
1 is determined from
T-n
at different temp
etero
characteristics of the solar cells in the semilogari
scale. It is seen linear segments that provides evidence of
an exponential dependence within the range of forward
biases 3kT/e < V < 0.7 V (it is the entire range of the
forward biases of our interest in this study, since the
maximum value of the open-circuit voltage Voc =
0.69 V). The slope of the linear segments Δln(I)/ΔV does
not depend on temperature. Therefore, the dominating
current transport mechanism through the
thmic
CdTe-pTiO-n 2 heterojunctions was established to be
ination processes via defects states
located in the vicinity of the heterojunction interface. In
this case the diode current Id is governed by the
following equation, which takes into account the effect
eV5.9
A109 5 is determined by means of the extrapolation of
the linear segment at 295 K toward the interception with
nt axis, φ0 = 0.69 eV is the height of the
potential barrier at 295 K.
Thus, we can write the expression for the light
VI characteristic of the CdTe-pTiO-n 2
heterojunction solar cell as follows:
sh
s
sph
IR
IRVqBII 00exp
R
V
. (2)
The measured VI characteristic of the
CdTe-pTiO-n 2 he tion solar cell under white
light
Fig. 3. The values s
etermi
terojunc
illumination (Iopt = 2cmmW100 ) is shown in
of the series R and shunt Rsh under
light conditions can be easily d ned using the
following relations [16]:
0
s dI
dV
R ,
0
sh dI
dV
R
the tunnel-recomb
of series resistance Rs [15]:
I V
. (3)
Now let u write equation se of short-
circuit and open-circuit conditions, expressions (4) and
(5), respectively:
s (2) in the ca
38
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Fig. 3. The I–V characteristic of the n-TiO /p-CdTe solar cells
under white light illumination (Iopt = ).
2
2cmmW100
sh
ssc
sscphsc R
RI
RIVqBII 00exp , (4)
Q
R
V
qVBI
sh
oc
ocph .exp 00
On the basis of Eqs. (4) and (5) one can easy derive
the following transcendental equation:
(5)
exp 00
sh
oc
sh
ssc
sscscoc RR
RqIBI
B
.0exp
1
00
ocqV
VRI
VTE
(6
Eq. (6) is a dimensionless transcendental equation,
which is considered in our case as a function of open-
circuit voltage Voc if all other parameters are
first
)
known. The
step will be the calculation of the open-circuit
voltage Voc using the previously determined values of
coefficients α0 = 1eV5.9 and B = A109 5 under dark
conditions [12] and that of the short-circuit current Isc =
A1022.1 3 , the series Rs = 180 Ω and shunt Rsh =
2.2·103 Ω resistance determined from the light VI
characteristic shown in Fig. 3.
ue of the open-circuit voltage Voc = 0.93 V,
calculated by means of equation (6) using the a
given values of the parameters (
The val
bove
Fig. 4, curve 1) does not
corre
alid since they were determined under
light
n solar cells depend
on li
late with the experimentally measured value Voc =
0.69 V (Fig. 3).
It is quite obvious that the values of some
parameters are given wrong. The values of Isc, Rs and Rsh
are undoubtedly v
conditions (Fig. 3). Therefore, we should pay more
attention on coefficients α0 and B.
It is known that the coefficients, which
quantitatively describe dominating current transport
mechanisms through heterojunctio
ght conditions (wavelength and intensity) [17, 18].
In our case, coefficients α0 and B, which quantitatively
describe tunnel-recombination mechanism of charge
transport through CdTe-pTiO-n 2 solar cells also
depend on light conditions [19]. Therefore the actual
values of coefficients α0 and B should also be
determined under l sing light VIight conditions u
characteristics of the solar cells under investigation.
If the inequality sIRVq 00exp >>
sqIR 00exp is valid, the following equ
can be written [13, 19]:
ation
.ln
ln
000 s
shR
V
shssc
IRVqB
RRII
(7)
One can easily determ
coefficient α from the slope of the linear depende
in the semilogarithmic scale
ine the actual value of the
nce (7)
shshssc RVRRII /ln vs. shIRV :
.
ln shssc VRRII
0
s
sh
IRVq
R
The coefficient B can be determined
extrapolation of the linear depen
interception with the current axis:
(8)
by the
dence toward the
0 s
(9)
istic of the
.lnexp 00
sh
shssc
R
VRRII
B
IRV
Fig. 5 shows the light I–V character
CdTe-pTiO-n 2 solar cells under wh
illumination (I = ) plotted i
ite light
n opt
ioned semilogarithmic coordinates
2cmmW100 the
ment
shsh RV /ssc RRIIln vs. shIRV . The
actual values of co 0
1eV9.10 and B =
A10 3 under gi light c were
equatio nd (9),
respectively.
efficients α =
ven05.1 onditions
determined from Fig. 5 using ns (8) a
oc under
idered
B are
Fig. 4. The calculation of the open-circuit voltage V
different conditions: 1) the coefficients α0 and B are cons
under dark conditions, 2) the coefficients α0 and
considered under light conditions.
39
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Fig. 5. The I–V characteristic of the n-TiO2/p-CdTe solar cells
under white light illumination (Iopt = 100 mWcm–2) plotted in
the semilogarithmic coordinates ln[{(Isc – I)(Rs + Rsh) –
– V}/R ] vs. (V + IR ). The ratio exp[– ( – q(V + IR /
of coefficients α0
d B instead of their previous values determined under
ark conditions in equation (6) and calculate the open-
rcu
sh sh 0 0 s
exp[–0(0 – qIRs)] is shown in the inset.
Now let us apply the new values
))]
an
d
ci it voltage Voc again (Fig. 4, curve 2). This time the
calculated open-circuit voltage under the white light
illumination Voc = 0.685 V is in a perfect agreement with
its experimentally measured value (Fig. 3) as opposite to
the result of the previous calculation (Fig. 4, curve 1).
The obtained results provide evidence of a
significant effect of the light dependent tunnel-
recombination mechanism of charge transport through
the anisotype heterojunctions CdTe-pTiO-n 2 under
forward biases on their photoelectric parameters, in
particular, open-circuit voltage Voc.
In order to prove this appr der nt light
conditions let us apply it to the VI characteristic of
the
oach un differe
CdTe-pTiO-n 2 heterojunction solar cells
illum
esistance
inated by monochromatic light (λ = 650 nm, Iopt =
2cmmW6 ), which is shown in 6. The series Rs
and were determined from the VI
Fig.
shunt Rsh r
characteristic (Fig. 6) using expressions (3) and are
Ω and 25.7 kΩ, respectively.
The I–V characteristic was rebuild in the
semilogarithmic coordinates
shshssc RVRRII /ln vs. shIRV (Fig. 7)
in or o
equal to 670
monochromatic illumination.
circuit volt (the inset (b
under the m
der t determine the actual values of coefficients
α0 = 2eV2.15 and B = A104.2 4 under the
It should be noting that the calculated value of the
open- age Voc = 0.64 ) of Fig. 7) is
equal to its experimental value onochromatic
illumination (Fig. 6). This fact proves that the considered
electrical parameters Rs, Rsh, α0 and B are valid.
Therefore, they can be applied for further photoelectric
analysis of CdTe-pTiO-n 2 under the monochromatic
illumination.
One of the main electrical properties of the
absorber la ased solar cells is the
concentration
yer in CdTe-b
of the uncompensated acceptors
DA NN , since it determines the width W of space
charge region. The width W of depletion region effects
on dominating charge transport mechanisms and
efficiency of solar cells, especially, under short
wavelength illumination [5, 20].
It is possible to calculate W and consequently
DA NN
quantum
of the CdTe-pTiO-n 2 heterojunction solar
cells by employing the open-circuit technique, which is
d on the following dimensionless transcendental
as a func
base
equation tion of W [14]:
0
)](exp[
coshsinh
)](exp[sinh)](exp[cosh
)exp(
1
)exp(
2
2
1
)(TE
1
0
1
0
TiO2
oc
oc
p
qVS
kT
qV
WD
S
FTW
1
0
22
opt
sh
oc
oco
nnn
nb
n
nnn
nb
n
n
n
p
qP
R
V
qVBh
L
Wd
L
Wd
D
LS
WdL
L
Wd
Wd
L
Wd
D
LS
LW
L
L
W
kTWD
(10)
where F = Aі/Asc is the shade factor of the frontal
contact, Aі and A are the illuminated and total area of
the solar cell, re
sc
spectively, TTiO2 is the transmittance of
the TiO2 thin film at λ = 650 nm, S and Sb are the
recombination velocity at the heterojunction interface
and back contact, Dn and Dp are the diffusion coefficient
of electrons and holes, Ln is the electron diffusion length,
d is the thickness of the CdTe layer, α is the absorption
coefficient at λ = 650 nm, Popt is the optical power, k is
the Boltzmann constant, T is the absolute temperature.
As was mentioned above we used thick single
crystal CdTe substrates (d = 1 mm) for the fabrication of
the CdTe-pTiO-n heterojunction solar cells unde2
investigation. In the case of a thick absorber, Eq. (10)
can be simplified:
r
.0
exp
1
exp
2
1
2
1
TE
1
0
ocqVS
FTW
0
1
0
opt
sh
oc
oco
noc
p
qP
R
V
qVBhv
L
W
kT
qV
WD
S
kTW
(11)
TiO2
pD
40
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Fig. 6. The I–V characteristic of the solar cells illuminated by
monochromatic light (λ = 650 nm, Iopt = 6 mWcm–2).
Fig. 7. The determination of the coefficients α0 and B from the
I–V characteristic of the CdTe-pTiO-n 2 solar cells under
monochromatic illumination (λ = 650 nm, Iopt = 6 mWcm–2).
The inset (a) shows the ratio exp[–0(0 – q(V + IRs))] /
exp[–0(0 – qIRs)]. The calculation of the open-circuit voltage
Voc is shown in the inset (b).
Fig. 8. The calculation of the width W of the space
charge region of the CdTe-pTiO-n 2 heterojunction
solar cells by employing transcendental Eq. (11).
During the calculation using equation (11) at 295 K
the shade factor F = 0.8 and the recombination velocity
at the TiO2/CdTe interface S = . The high
recombination velocity results from the high
concentration of surface states at the heterojunction
interface.
The measured value of the optical transmittance of
the TiO2 thin film deposited onto a quartz substrate
eously with the fabrication of the
17 scm10
simultan
CdTe-pTiO-n 2 heterojunctions is equal to TTiO2
= 0.34 at λ = 650 nm. The relatively low transmittance
ts from the high concentration of oxygen vacancies,
hich are responsible for low resistivity of pure TiO
e
resul
w 2
thin films used in our study in order to decrease the
series resistance of th CdTe2 solar cells
[21]. It is quite obvious that the doping of TiO
-pTiO-n
thin
rystal CdT
investigation is e
2
films is needed in order to obtain both highly conductive
and transparent coatings.
The parameters of single c e are taken
from literature Dn = 12 s5cm2 and Dp = 12 s5cm.2 ,
τn = s10 9 , Ln = (τnDn)
1/2 = 1.58 μm, α = 142000cm [5,
22, 23].
The calculated value of the width W of the
depletion region in the heterojunction solar cells under
qual to cm108.5 6 (Fig. 8). The
concentration of uncompensated acceptors DA NN
can be calculated by employing the following equation:
22
002
Wq
qV
NN ocp
DA
, (12)
where ε0 is the permittivity of free space and εp = 10.6 is
the dielectric constant of CdTe. Finely we obtain the
concentration of uncompensated acceptors in our single
crystal CdTe substrate NA – ND = 8.12 10 cm at
K, that is slightly higher than the concentration of
free holes p = 7.2 1 termined fro l
cond ty measurements at ame
temperatur
15 –3
295
015cm–3 de m electrica
uctivi the s
e [12].
It should be noted that the width W of the space
charge region of the CdTe-pTiO-n 2 solar cells and
thus the concentration of unc acceptors NA –
ND were determined under light conditions. Th lues
may differ from that determined under dark condit
using the volt-capacitance technique due to th
ompensated
eir va
ions
e
recharging traps within th
illumination.
ite light (Iopt = 100 mWcm–2) and
monochromatic light (λ = 650 nm, Iopt = 6 mWcm–2).
e space charge region under
4. Conclusions
Photoelectric properties of n-TiO2/p-CdTe
heterojunction solar cells, fabricated by means of TiO2
thin film deposition onto freshly cleaved single crystal
CdTe substrates using the DC reactive magnetron
sputtering technique, were investigated under different
light conditions: wh
41
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 1. P. 37-42.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
42
The equation for the light I-V characteristic of the
CdTe-pTiO-n 2 so ed on the basis
of the dominating current transport mechanism through
the heterojunctions under forward biases (tunnel-
recombination via defect states in the vicinity of the
TiO2/CdTe heterojunction) and in the presence of series
and shunt resistance. The considerable effect of light
dependent co
lar cells was deriv
efficients α and B on photoelectric
parameters of the
0
CdTe-pTiO-n 2 heterojunction
rticular open-circuit voltage Voc, was
quantitatively shown. Therefore, one should determine
solar cells, in pa
the mentioned coefficients under illumination in order to
deal with an accurate analysis of photoelectrical
properties of the CdTe-pTiO-n 2 solar cells.
The width W = 8.5·10-6 cm of the space charge
region of the CdTe-pTiO-n 2 solar cells and
consequently the concentration of uncompensated
acceptors NA – ND = 8.12 1015cm–3 were determined by
ing t n-circuit method, which is based on
the analysis of heterojunction solar cells illuminated by
monochromatic light under open-circuit conditions.
References
1. K.W. Mitchell, A.L. Farenbruch, R.H. Bube,
Evaluation of the CdS/CdTe heterojunction solar
cell // J. Appl. Ph 71 (1977).
2. N. Romeo, B. Bosio, R. Tedeschi, A. Romeo,
V. Canevari, A highly efficient and stable
CdTe/CdS thin film solar cell // Sol. Energy Mater.
Sol. Cells, 58, p. 209-218 (1999).
3. V.P. Singh, .B. Lush, W
employ he ope
ys. 48, p. 4365-43
J.C. McClure, G . Wang,
n sol
90,
3415 (2006).
Problems of efficiency of
8.
, 387, p. 26-28 (2001).
io
,
11.
12. ,
P.D. Maryanchuk, K.S. Ulyanytsky, Electrical and
photoelectrical properties of photosensitive
heterojunctions n-TiO2/p-CdTe // Semicond. Sci.
Technol. 26, 125006 (2011).
13. V.V. Brus, M.I. Ilashchuk, Z.D. Kovalyuk,
P.D. Maryanchuk, Light-dependent I-V
characteristics of TiO2/CdTe heterojunction solar
cells // Semicond. Sci. Technol. 27, 055008 (2012).
14. V.V. Brus, Open-circuit analysis of thin film
heterojunction solar cells // Solar Energy, 86,
p. 1600-1604 (2012).
15. A.R. Rieben, D.L. Feucht, nGe-pCaAs
heterojunctions // Solid-State Electron. 9, p. 1055-
1065 (1966).
16. D.K. Schroder, Semiconductor Material and
Device Characterization.Wiley. New Jersey, 2006.
17. J.R. Sites, H. Tavakolian, R.A. Sasala, Analysis of
apparent quantum efficiency // Solar Cells, 29,
p. 39-48 (1990).
18. D.L. Linam, V.P. Singh, J.C. McClure, G.B. Lush,
X. Mathew, P.J. Sebastian, Light and voltage
dependence of the junction transport properties of
CdTe/CdS phtovoltaics // Sol. Energy. Mater. Sol.
Cells, 70, p. 335-344 (2001).
19. V.V. Brus, On quantum efficiency of nonideal solar
cells // Solar Energy, 86, p. 786-791 (2012).
20. L.A. Kosyachenko, A.I. Savchuk, E.V. Grushko,
Dependence of efficiency of thin-film CdS/CdTe
solar cell on parameters of absorber layer and
barrier structure // Thin Solid Films, 517, p. 2368-
2391 (2009).
21. U. Diebold, The surface science of titanium dioxide
// Surf. Sci. Repts. 43, p. 53-229 (2003).
22. M. Aven, J.S. Prener, Physics and Chemistry of II-
VI Compaunds. North-Holand, Amsterdam, 1967.
23. H. Arwin, D.E. Aspnes, Nondestructive analysis of
(x = 0.00, 0.20, 0.29, and 1.00) by
spectroscopic ellipsometry // J. Vac. Sci. Technol.
A2, p. 1316-1323 (1984).
X. Wang, G.W. Thompson, E. Clark, Thin film
CdTe-CdS heterojunctio ar cells on lightweight
metal substrates // Sol. Energy Mater. Sol. Cells,
59, p. 145-161 (1999).
4. A. Romeo, G. Khrypunov, F. Kurdesau, M. Arnold,
D.L. Batzner, H. Zogg, A.N. Tiwari, High-
efficiency flexible CdTe solar cells on polymer
substrates // Sol. Energy Mater. Sol. Cells
p. 3407-
5. L.A. Kosyachenko,
photoelectric conversion in thin-film CdS/CdTe
solar cells // Semiconductors, 40, p. 710-725
(2006).
6. G. Khrypunov, A. Romeo, F. Kurdesau,
D.L. Batxner, H. Zogg, A.N. Tiwari, Recent
developments in evaporated CdTe solar cells // Sol.
Energy Mater. Sol. Cells, 90, p. 664-667 (2006).
7. T.M. Razykov, C.S. Ferekides, D. Morel,
E. Stefanakos, H.S. Ullal, H.M. Upadhyaya, Solar
photovoltaic electricity: Current status and future
prospects // Solar Energy, 85, p. 1580-1608 (2011).
K. Ernst, R. Engelhardt, K. Ellmer, C. Kelch,
H.J. Muffler, M.Ch. Lux-Steiner, R. Konenkamp,
Contacts to a solar cell with extremely thin CdTe
absorber // Thin Solid Films
9. K. Ernst, A. Belaidi, R. Konenkamp, Solar cell
with extremely thin absorber on highly structured
substrate // Semicond. Sci. Technol. 18, p. 475-479
(2003).
10. S. Tiefenbacher, C. Pettenkofer, W. Jaegermann,
Ultrahigh vacuum preparat n and characterization
of TiO2/CdTe interfaces: Electrical properties and
implications for solar cells // J. Appl. Phys. 91
p. 1984-1987 (2002).
A. Belaidi, R. Bayon, L. Dloczik, K. Ernst,
M.Ch. Lux-Steiner, R. Konenkamp, Comparison of
different thin film absorbers used in eta-solar cells
// This Solid Films, 421-431, p. 488-491 (2003).
V.V. Brus, M.I. Ilashchuk, Z.D. Kovalyuk
TeCdHg xx1
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| id | nasplib_isofts_kiev_ua-123456789-117601 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:10:33Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Brus, V.V. Maryanchuk, P.D. Parfenyuk, O.A. Vakhnyak, N.D. 2017-05-25T15:40:49Z 2017-05-25T15:40:49Z 2013 Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells / V.V. Brus, P.D. Maryanchuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 37-42. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 71.55.Gs, 73.40.Lq https://nasplib.isofts.kiev.ua/handle/123456789/117601 Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at the TiO₂/CdTe heterojunction interface was taken into consideration. The width W of the space charge region of the CdTe-pTiO₂-n solar cells and consequently the concentration of uncompensated acceptors NA - ND were determined using the open-circuit method. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells Article published earlier |
| spellingShingle | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells Brus, V.V. Maryanchuk, P.D. Parfenyuk, O.A. Vakhnyak, N.D. |
| title | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells |
| title_full | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells |
| title_fullStr | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells |
| title_full_unstemmed | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells |
| title_short | Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells |
| title_sort | photoelectrical analysis of n-tio₂/p-cdte heterojunction solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117601 |
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