Simple method for SiC nanowires fabrication

In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2011
Main Authors: Kiselov, V.S., Lytvyn, O.S., Yukhymchuk, V.O., Belyaev, A.E.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117602
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
author_facet Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
citation_txt Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.
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language English
last_indexed 2025-12-07T13:33:57Z
publishDate 2011
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
2017-05-25T15:57:17Z
2017-05-25T15:57:17Z
2011
Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS 81.07.Gf
https://nasplib.isofts.kiev.ua/handle/123456789/117602
In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Simple method for SiC nanowires fabrication
Article
published earlier
spellingShingle Simple method for SiC nanowires fabrication
Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
title Simple method for SiC nanowires fabrication
title_full Simple method for SiC nanowires fabrication
title_fullStr Simple method for SiC nanowires fabrication
title_full_unstemmed Simple method for SiC nanowires fabrication
title_short Simple method for SiC nanowires fabrication
title_sort simple method for sic nanowires fabrication
url https://nasplib.isofts.kiev.ua/handle/123456789/117602
work_keys_str_mv AT kiselovvs simplemethodforsicnanowiresfabrication
AT lytvynos simplemethodforsicnanowiresfabrication
AT yukhymchukvo simplemethodforsicnanowiresfabrication
AT belyaevae simplemethodforsicnanowiresfabrication