Simple method for SiC nanowires fabrication

In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Kiselov, V.S., Lytvyn, O.S., Yukhymchuk, V.O., Belyaev, A.E.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117602
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117602
record_format dspace
spelling Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
2017-05-25T15:57:17Z
2017-05-25T15:57:17Z
2011
Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS 81.07.Gf
https://nasplib.isofts.kiev.ua/handle/123456789/117602
In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Simple method for SiC nanowires fabrication
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Simple method for SiC nanowires fabrication
spellingShingle Simple method for SiC nanowires fabrication
Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
title_short Simple method for SiC nanowires fabrication
title_full Simple method for SiC nanowires fabrication
title_fullStr Simple method for SiC nanowires fabrication
title_full_unstemmed Simple method for SiC nanowires fabrication
title_sort simple method for sic nanowires fabrication
author Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
author_facet Kiselov, V.S.
Lytvyn, O.S.
Yukhymchuk, V.O.
Belyaev, A.E.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117602
citation_txt Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.
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AT lytvynos simplemethodforsicnanowiresfabrication
AT yukhymchukvo simplemethodforsicnanowiresfabrication
AT belyaevae simplemethodforsicnanowiresfabrication
first_indexed 2025-12-07T13:33:57Z
last_indexed 2025-12-07T13:33:57Z
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