Simple method for SiC nanowires fabrication

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Kiselov, V.S., Lytvyn, O.S., Yukhymchuk, V.O., Belyaev, A.E.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117602
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.

In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1...