Electrophysical properties of meso-porous silicon free standing films modified with palladium
Resistivity and complex impedance voltage dependences for thick mesoporous
 silicon free layers were studied in this work. The asymmetrical by the sign of
 applied voltage experimental curves at low frequencies have been obtained. Modification
 of electrophysical properties d...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2011 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117603 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Resistivity and complex impedance voltage dependences for thick mesoporous
silicon free layers were studied in this work. The asymmetrical by the sign of
applied voltage experimental curves at low frequencies have been obtained. Modification
of electrophysical properties due to introduction of palladium particles into the porous
matrix is observed. Impedance change regularities during oxidation of the samples have
been measured. The explanation of experimental results by asymmetrical distribution of
charge carrier traps in the bulk of porous silicon has been suggested. Energy band
diagrams and charge transfer mechanisms of these heterostructures are discussed.
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| ISSN: | 1560-8034 |