Electrophysical properties of meso-porous silicon free standing films modified with palladium
Resistivity and complex impedance voltage dependences for thick mesoporous
 silicon free layers were studied in this work. The asymmetrical by the sign of
 applied voltage experimental curves at low frequencies have been obtained. Modification
 of electrophysical properties d...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117603 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862632052805861376 |
|---|---|
| author | Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| author_facet | Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| citation_txt | Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Resistivity and complex impedance voltage dependences for thick mesoporous
silicon free layers were studied in this work. The asymmetrical by the sign of
applied voltage experimental curves at low frequencies have been obtained. Modification
of electrophysical properties due to introduction of palladium particles into the porous
matrix is observed. Impedance change regularities during oxidation of the samples have
been measured. The explanation of experimental results by asymmetrical distribution of
charge carrier traps in the bulk of porous silicon has been suggested. Energy band
diagrams and charge transfer mechanisms of these heterostructures are discussed.
|
| first_indexed | 2025-11-30T12:12:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117603 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T12:12:28Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. 2017-05-25T15:58:28Z 2017-05-25T15:58:28Z 2011 Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 61.72.uf, 72.80.Cw, 73.61.Cw https://nasplib.isofts.kiev.ua/handle/123456789/117603 Resistivity and complex impedance voltage dependences for thick mesoporous
 silicon free layers were studied in this work. The asymmetrical by the sign of
 applied voltage experimental curves at low frequencies have been obtained. Modification
 of electrophysical properties due to introduction of palladium particles into the porous
 matrix is observed. Impedance change regularities during oxidation of the samples have
 been measured. The explanation of experimental results by asymmetrical distribution of
 charge carrier traps in the bulk of porous silicon has been suggested. Energy band
 diagrams and charge transfer mechanisms of these heterostructures are discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrophysical properties of meso-porous silicon free standing films modified with palladium Article published earlier |
| spellingShingle | Electrophysical properties of meso-porous silicon free standing films modified with palladium Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| title | Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full | Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_fullStr | Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full_unstemmed | Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_short | Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_sort | electrophysical properties of meso-porous silicon free standing films modified with palladium |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117603 |
| work_keys_str_mv | AT manilovai electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT skryshevskyva electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT alekseevsa electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT kuznetsovgv electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium |