Electrophysical properties of meso-porous silicon free standing films modified with palladium
Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of pa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2011 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117603 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
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Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. 2017-05-25T15:58:28Z 2017-05-25T15:58:28Z 2011 Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 61.72.uf, 72.80.Cw, 73.61.Cw https://nasplib.isofts.kiev.ua/handle/123456789/117603 Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of palladium particles into the porous matrix is observed. Impedance change regularities during oxidation of the samples have been measured. The explanation of experimental results by asymmetrical distribution of charge carrier traps in the bulk of porous silicon has been suggested. Energy band diagrams and charge transfer mechanisms of these heterostructures are discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrophysical properties of meso-porous silicon free standing films modified with palladium Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| spellingShingle |
Electrophysical properties of meso-porous silicon free standing films modified with palladium Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| title_short |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_fullStr |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_full_unstemmed |
Electrophysical properties of meso-porous silicon free standing films modified with palladium |
| title_sort |
electrophysical properties of meso-porous silicon free standing films modified with palladium |
| author |
Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| author_facet |
Manilov, A.I. Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Resistivity and complex impedance voltage dependences for thick mesoporous
silicon free layers were studied in this work. The asymmetrical by the sign of
applied voltage experimental curves at low frequencies have been obtained. Modification
of electrophysical properties due to introduction of palladium particles into the porous
matrix is observed. Impedance change regularities during oxidation of the samples have
been measured. The explanation of experimental results by asymmetrical distribution of
charge carrier traps in the bulk of porous silicon has been suggested. Energy band
diagrams and charge transfer mechanisms of these heterostructures are discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117603 |
| citation_txt |
Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT manilovai electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT skryshevskyva electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT alekseevsa electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium AT kuznetsovgv electrophysicalpropertiesofmesoporoussiliconfreestandingfilmsmodifiedwithpalladium |
| first_indexed |
2025-11-30T12:12:28Z |
| last_indexed |
2025-11-30T12:12:28Z |
| _version_ |
1850857620498284544 |