Electrophysical properties of meso-porous silicon free standing films modified with palladium

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Manilov, A.I., Skryshevsky, V.A., Alekseev, S.A., Kuznetsov, G.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117603
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ.

Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of pa...