Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays
Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It is shown that for bow-tie antennas in the arrays in diffraction limit approximat...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Cite this: | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays / M.V. Sakhno, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 55-58. — Бібліогр.: 7 назв. — англ. |
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| author | Sakhno, M.V. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| author_facet | Sakhno, M.V. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| citation_txt | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays / M.V. Sakhno, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 55-58. — Бібліогр.: 7 назв. — англ. |
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| description | Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It is shown that for bow-tie antennas in the arrays in diffraction limit approximation, there are almost no cross-talks between the neighbour antennas. It is shown that the gain for one antenna is higher than that for antenna, in the array.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 1. P. 55-58.
PACS 02.60.Ed, Gf; 06.20.Fb; 07.20.Dt
Simulated properties of printed antennas on silicon substrates
for THz/sub-THz arrays
M.V. Sakhno1,2, J.V. Gumenjuk-Sichevska1, F.F. Sizov1*
1V. Lashkaryov Institute of Semiconductor Physics, 41, prospect Nauky, 03028 Kyiv, Ukraine,
2Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka str., 01601 Kyiv, Ukraine
*Corresponding author e-mail: sizov@isp.kiev.ua
Abstract. Some properties of printed antennas and arrays for uncooled silicon plasmon
detector arrays based on field effect transistors are shortly discussed. Antenna geometry
has been optimised for maximising gain at 300 GHz. It is shown that for bow-tie
antennas in the arrays in diffraction limit approximation, there are almost no cross-talks
between the neighbour antennas. It is shown that the gain for one antenna is higher than
that for antenna, in the array.
Keywords: bow-tie antenna, THz, FET detectors, antenna array.
Manuscript received 15.10.10; accepted for publication 02.12.10; published online 28.02.11.
1. Introduction
THz technologies are actively spread now in different
areas of human activity. Numerous recent breakthroughs
have pushed THz research into the stage of wide public
use. One of the important components of these
technologies are detectors [1], and one of the key
components of THz/sub-THz devices is an antenna
providing transfer of a signal to the electromagnetic field
of radiation or, for the reciprocal process, converting
electromagnetic field into a signal (voltage or current) in
the detector.
The simplest one as well as the best understood is
the dipole antenna (see, e.g. [2]). For radiation effective
transmission and reception its length should be close to
the half of the wavelength λ. The feature drawbacks
important for effective radiation reception by THz/sub-
THz detectors of this kind of antenna are its low gain,
lack of directionality, narrow bandwidth. A large
number of much more effective antennas were proposed
[2], including dish and horn antennas, log-periodic,
spiral, slot/aperture, etc. and antenna arrays based on
some of them. But most of them are difficult to fabricate.
Bow-tie antenna is one of the best option in ratio
performance/difficult of fabrication. Comparison of
different IR antennas can be found in [3], and
functioning peculiarities are discussed in, e.g., [4].
From the practical point of view, to get low-cost
active imaging instruments in THz/sub-THz region, it is
important to use uncooled arrays of detectors. Among a
number of different detectors proposed and realized for
THz/sub-THz spectral region in recent two decades, the
concept of THz detection based on plasma-wave
excitation in two-dimensional electron gas in field effect
transistors (FETs) [5-7] integrated with readout
integrated circuits (ROICs), though they are still in the
stage of research and optimisation, seems one of the
most attractive as makes it possible to develop large
scale integrated devices based on conventional large
scale integration (LSI) technologies. Here, an attempt to
optimize antenna geometry and antenna position in array
for field-effect silicon transistors used for uncooled
THz/sub-THz detectors is undertaken.
It is important to maximise antenna performance.
Correct antenna geometry should be chosen. In this
investigation, we optimise bow-tie antenna geometry for
maximising gain at the frequency 300 GHz without
using dielectric lenses. We also investigate the influence
of the substrate thickness and mutual antennas influence.
2. Antenna modelling
Antenna’s behaviour is similar in receiving and
transmitting modes. That’s why, the antenna was
modelled in the transmitting mode, as this procedure is
simpler and more accurate. To provide computation, we
chose the method of moments (MoM). Most of all, we
were interested in the antenna gain. The gain is
proportional to the antenna effective area. The detector
sensitivity is proportional to the antenna effective area,
too. The relation between the antenna effective area Seff
and antenna gain G is [2, 3]
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
55
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 1. P. 55-58.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Fig. 1. The antenna geometry.
Fig. 2. System cross section.
,
4
2
GSeff π
λ
=
where λ is the wavelength. Thus, with the frequency ν
increase the effective antenna area is reduced.
Recently new kind of THz/sub-THz detectors was
developed, such as silicon plasma field effect transistors
(see, e.g. [6, 7]). They can be implemented using highly
developed Si technology. The main objective of this
work was to optimise antenna geometry for these
devices. The bow-tie shape of the antenna was chosen
(Fig. 1), because of possible relatively high gain in
comparison with other planar printed antennas.
The planar system cross-section is shown in Fig. 2.
The middle aluminium layer is an antenna. Passivation
layers are located below and above the antenna layer.
Silicon dioxide layer is manufactured during the FET
production procedure. Silicon is the substrate where FET
detectors were formed. At the backside of the substrate,
the metallization layer is formed.
As optimisation parameters of the antenna, we used
a2, r, dSi, ϕ, see Figs.1, 2. Aluminium has high electric
conductance in this frequency range, that’s why it can be
modelled as an ideal conductor. The antenna geometric
parameters and materials electric constants are listed in
Table 1 and Table 2, respectively.
A lot of peaks (Fig. 3) appearing in the gain
dependences on radiation frequency ν can be explained
by interference of incident wave and wave reflected
from metallization layer. The substrate thickness
determines interferential maximum or minimum. So, to
obtain high gain it is important to choose the proper
substrate thickness.
Table 1. Geometrical parameters of antenna.
a1,
µm
a2,
µm
r,
µm
d,
µm
dSi,
µm
ϕ,
deg
b1
10 75.8 164 20 505.5 104 b1 = (b1+ 2a2 – d)×
×tan ⎟
⎠
⎞
⎜
⎝
⎛ ϕ
2
Table 2. Materials electrical properties.
Material ε m
S,σ
Si 11.7 5
SiO2 3.9 0
Antenna input impedance is not higher than 200 Ω
(Fig. 4), so it can be difficult to match it with FET input
impedance. In FET detectors, the antennas are coupled
to the source and gate inputs. In THz/sub-THz frequency
range the impedance of this circuit is much less as
compared to the channel one (~ 107 – 1010 Ω) that
generates the output signal and serves for its registration
(or is attached to the ROIC input circuit).
Interaction between antennas was analyzed for the
system of two antennas with two different antennas
relative positions. One of them is for the case when
antennas axes are parallel, and the other one is for the
case when antennas are arranged along one axis.
1x1011 2x1011 3x1011 4x1011 5x1011
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
G
f, Hz
Gain
Fig. 3. Gain frequency dependence.
1x1011 2x1011 3x1011 4x1011 5x1011
-20
0
20
40
60
80
100
120
R
e(
Z)
,Im
(Z
),O
hm
f, Hz
1- Re(Z)
2- Im(Z)
2
1
Fig. 4. Antenna input impedance.
56
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 1. P. 55-58.
Fig. 5. Gain for one antenna and for two antenna system.
0 20 40 60 80
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
G
θ,deg
Gain
Fig. 6. Antenna gain angular dependence.
It was shown (Fig. 5) that the antennas gain is
lower for the two-antenna system in comparison with the
single antenna. It can be explained in the following way.
Let us imagine that antenna operates in the transmitting
mode. The gain is related to the angular dependence of
this antenna (Fig. 6). The narrower the angular
dependence, the higher the gain is. When there are two
antennas, the angular dependence becomes broader. The
gain is smaller in this case.
Thus, interaction between antennas exists. It can be
described by the “cross-talk” parameter S21. The value of
|S21|2 shows an approximate amount of energy which is
transferred from the first antenna to another one.
One can see (Fig. 7) that when the distance
between antennas is smaller than 900 µm interaction is
smaller for parallel axes positioning. This pattern should
be used in antenna arrays with a short distance between
antennas. This interaction is minimal at the distance
close to 800 µm (Fig. 8).
Fig. 7. Interaction of antennas for different system
configurations.
Fig. 8. Gain dependence on distance at the signal frequency
300 GHz.
3. Conclusions
Some properties of printed antennas and arrays for
uncooled silicon plasmon detector arrays based on field
effect transistors were investigated. Planar bow-tie
shaped antenna geometry has been optimised for
maximising the gain at the frequency 300 GHz. The
antenna has a relatively high gain in comparison with
other planar antennas for the THz range frequencies.
Bow-tie antenna + detector system performance depends
on the substrate thickness. It has been shown that the
gain for the single antenna is larger than the gain for
interacting antennas in the array. The power exchange
between two antennas is relatively small, but it is
sufficient to decrease the gain of the entire system. The
optimal distance between detectors was found, which
minimized the interaction between neighboring
antennas. Therefore, the multielement antenna-detector
array of THz-range should be optimized not only on the
parameters of each antenna, but, taking into account
their mutual influence, on the distance between them and
their mutual arrangement.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
57
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 1. P. 55-58.
References
1. F. Sizov and A. Rogalski, THz detectors // Pro-
gress in Quantum Electronics 34(5), p. 278-347
(2010).
2. C. Balanis, Antenna Theory: Analysis and Design.
John Wiley & Sons, Inc, Hoboken (2005).
3. F.J. González and G.D. Boreman, Comparison of
dipole, bowtie, spiral and log-periodic IR antennas
// Infrared Physics & Technology 46(5), p. 418-428
(2005).
4. D.B. Rutledge, S.E. Schwarz and A.T. Adams,
Infrared and submillimetre antennas // Infrared
Physics, 18(5-6), p. 713-729 (1978).
5. W. Knap, V. Kachorovskii, Y. Deng, S. Ru-
myantsev, J.Q. Lü, R. Gaska, M.S. Shur, G. Simin,
X. Hu, M.A. Khan, C.A. Saylor and L.C. Brunel,
Nonresonant detection of terahertz radiation in field
effect transistors // J. Appl. Phys. 91(11), 9346
(2002).
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
6. E. Öjefors, A. Lisauskas, D. Glaab, H. Roskos and
U. Pfeiffer, Terahertz imaging detectors in CMOS
technology // J. Infrared, Millimeter and Terahertz
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N. Dyakonova, J. Łusakowski, K. Karpierz,
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A. El Fatimy, Y. Meziani and T. Otsuji, Field
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1337 (2009).
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| id | nasplib_isofts_kiev_ua-123456789-117622 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:41:25Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sakhno, M.V. Gumenjuk-Sichevska, J.V. Sizov, F.F. 2017-05-25T17:25:39Z 2017-05-25T17:25:39Z 2011 Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays / M.V. Sakhno, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 55-58. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 02.60.Ed, Gf; 06.20.Fb; 07.20.Dt https://nasplib.isofts.kiev.ua/handle/123456789/117622 Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It is shown that for bow-tie antennas in the arrays in diffraction limit approximation, there are almost no cross-talks between the neighbour antennas. It is shown that the gain for one antenna is higher than that for antenna, in the array. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays Article published earlier |
| spellingShingle | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays Sakhno, M.V. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| title | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays |
| title_full | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays |
| title_fullStr | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays |
| title_full_unstemmed | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays |
| title_short | Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays |
| title_sort | simulated properties of printed antennas on silicon substrates for thz/sub-thz arrays |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117622 |
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