X-ray study of dopant state in highly doped semiconductor single crystals
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The com...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2011 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117624 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117624 |
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Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. 2017-05-25T17:28:01Z 2017-05-25T17:28:01Z 2011 X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Dd, Ff, Ss; 81.05.Cy, Ea https://nasplib.isofts.kiev.ua/handle/123456789/117624 Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements. The work was supported by the Russian Foundation for Basic Research, project no. 06-02-1624 and by the Russian Foundation for Basic Research and the Government of Kaluga region, project no. 09-02-97516. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics X-ray study of dopant state in highly doped semiconductor single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
X-ray study of dopant state in highly doped semiconductor single crystals |
| spellingShingle |
X-ray study of dopant state in highly doped semiconductor single crystals Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| title_short |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_fullStr |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full_unstemmed |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_sort |
x-ray study of dopant state in highly doped semiconductor single crystals |
| author |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| author_facet |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117624 |
| citation_txt |
X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
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2025-12-07T20:19:11Z |
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