X-ray study of dopant state in highly doped semiconductor single crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Shul’pina, I.L., Kyutt, R.N., Ratnikov, V.V., Prokhorov, I.A., Bezbakh, I.Zh., Shcheglov, M.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117624
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ.

Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The com...