Non-ohmic conduction in tin dioxide based ceramics with copper addition

The current-voltage characteristics and temperature dependences of electrical
 conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
 possible mechanism of non-ohmic conduction in these materials is discussed. Due to
 addition of CuO up to 0.5...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Gaponov, A.V., Glot, A.B.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117625
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Gaponov, A.V.
Glot, A.B.
author_facet Gaponov, A.V.
Glot, A.B.
citation_txt Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The current-voltage characteristics and temperature dependences of electrical
 conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
 possible mechanism of non-ohmic conduction in these materials is discussed. Due to
 addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and
 the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of
 electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase.
first_indexed 2025-11-26T04:50:12Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-26T04:50:12Z
publishDate 2011
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Gaponov, A.V.
Glot, A.B.
2017-05-25T17:41:14Z
2017-05-25T17:41:14Z
2011
Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ.
1560-8034
PACS 73.30.+y, 73.40.-c, 73.50.Fq
https://nasplib.isofts.kiev.ua/handle/123456789/117625
The current-voltage characteristics and temperature dependences of electrical
 conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
 possible mechanism of non-ohmic conduction in these materials is discussed. Due to
 addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and
 the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of
 electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Non-ohmic conduction in tin dioxide based ceramics with copper addition
Article
published earlier
spellingShingle Non-ohmic conduction in tin dioxide based ceramics with copper addition
Gaponov, A.V.
Glot, A.B.
title Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_full Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_fullStr Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_full_unstemmed Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_short Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_sort non-ohmic conduction in tin dioxide based ceramics with copper addition
url https://nasplib.isofts.kiev.ua/handle/123456789/117625
work_keys_str_mv AT gaponovav nonohmicconductionintindioxidebasedceramicswithcopperaddition
AT glotab nonohmicconductionintindioxidebasedceramicswithcopperaddition