Non-ohmic conduction in tin dioxide based ceramics with copper addition
The current-voltage characteristics and temperature dependences of electrical
 conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
 possible mechanism of non-ohmic conduction in these materials is discussed. Due to
 addition of CuO up to 0.5...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117625 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862572448052936704 |
|---|---|
| author | Gaponov, A.V. Glot, A.B. |
| author_facet | Gaponov, A.V. Glot, A.B. |
| citation_txt | Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The current-voltage characteristics and temperature dependences of electrical
conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
possible mechanism of non-ohmic conduction in these materials is discussed. Due to
addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and
the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of
electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase.
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| first_indexed | 2025-11-26T04:50:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117625 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T04:50:12Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaponov, A.V. Glot, A.B. 2017-05-25T17:41:14Z 2017-05-25T17:41:14Z 2011 Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 73.30.+y, 73.40.-c, 73.50.Fq https://nasplib.isofts.kiev.ua/handle/123456789/117625 The current-voltage characteristics and temperature dependences of electrical
 conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and
 possible mechanism of non-ohmic conduction in these materials is discussed. Due to
 addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and
 the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of
 electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Non-ohmic conduction in tin dioxide based ceramics with copper addition Article published earlier |
| spellingShingle | Non-ohmic conduction in tin dioxide based ceramics with copper addition Gaponov, A.V. Glot, A.B. |
| title | Non-ohmic conduction in tin dioxide based ceramics with copper addition |
| title_full | Non-ohmic conduction in tin dioxide based ceramics with copper addition |
| title_fullStr | Non-ohmic conduction in tin dioxide based ceramics with copper addition |
| title_full_unstemmed | Non-ohmic conduction in tin dioxide based ceramics with copper addition |
| title_short | Non-ohmic conduction in tin dioxide based ceramics with copper addition |
| title_sort | non-ohmic conduction in tin dioxide based ceramics with copper addition |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117625 |
| work_keys_str_mv | AT gaponovav nonohmicconductionintindioxidebasedceramicswithcopperaddition AT glotab nonohmicconductionintindioxidebasedceramicswithcopperaddition |