Negative magnetoresistance of heavily doped silicon p-n junction

At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is pro...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2011
Автори: Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117628
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Borblik, V.L.
Rudnev, I.A.
Shwarts, Yu.M.
Shwarts, M.M.
author_facet Borblik, V.L.
Rudnev, I.A.
Shwarts, Yu.M.
Shwarts, M.M.
citation_txt Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is proved as a whole to be extremely small, negative at low fields and changing its sign when the field increases. In the positive region of the diode magnetoresistance, its field dependence is quadratic at first and then becomes close to the linear one. With increase in the current through the diode, the negative component of the diode magnetoresistance decreases, and the smaller its value, the more extended is the quadratic section and the shorter is the linear one. The results are interpreted as caused by hopping conduction over a system of electron “lakes” in the region of p-n junction.
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last_indexed 2025-12-07T17:17:16Z
publishDate 2011
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Borblik, V.L.
Rudnev, I.A.
Shwarts, Yu.M.
Shwarts, M.M.
2017-05-25T17:53:03Z
2017-05-25T17:53:03Z
2011
Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS 72.20.Ee, My, 85.30.Kk
https://nasplib.isofts.kiev.ua/handle/123456789/117628
At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is proved as a whole to be extremely small, negative at low fields and changing its sign when the field increases. In the positive region of the diode magnetoresistance, its field dependence is quadratic at first and then becomes close to the linear one. With increase in the current through the diode, the negative component of the diode magnetoresistance decreases, and the smaller its value, the more extended is the quadratic section and the shorter is the linear one. The results are interpreted as caused by hopping conduction over a system of electron “lakes” in the region of p-n junction.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Negative magnetoresistance of heavily doped silicon p-n junction
Article
published earlier
spellingShingle Negative magnetoresistance of heavily doped silicon p-n junction
Borblik, V.L.
Rudnev, I.A.
Shwarts, Yu.M.
Shwarts, M.M.
title Negative magnetoresistance of heavily doped silicon p-n junction
title_full Negative magnetoresistance of heavily doped silicon p-n junction
title_fullStr Negative magnetoresistance of heavily doped silicon p-n junction
title_full_unstemmed Negative magnetoresistance of heavily doped silicon p-n junction
title_short Negative magnetoresistance of heavily doped silicon p-n junction
title_sort negative magnetoresistance of heavily doped silicon p-n junction
url https://nasplib.isofts.kiev.ua/handle/123456789/117628
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AT shwartsmm negativemagnetoresistanceofheavilydopedsiliconpnjunction