Negative magnetoresistance of heavily doped silicon p-n junction
At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is pro...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117628 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709336495620096 |
|---|---|
| author | Borblik, V.L. Rudnev, I.A. Shwarts, Yu.M. Shwarts, M.M. |
| author_facet | Borblik, V.L. Rudnev, I.A. Shwarts, Yu.M. Shwarts, M.M. |
| citation_txt | Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is proved as a whole to be extremely small, negative at low fields and changing its sign when the field increases. In the positive region of the diode magnetoresistance, its field dependence is quadratic at first and then becomes close to the linear one. With increase in the current through the diode, the negative component of the diode magnetoresistance decreases, and the smaller its value, the more extended is the quadratic section and the shorter is the linear one. The results are interpreted as caused by hopping conduction over a system of electron “lakes” in the region of p-n junction.
|
| first_indexed | 2025-12-07T17:17:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117628 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:17:16Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Rudnev, I.A. Shwarts, Yu.M. Shwarts, M.M. 2017-05-25T17:53:03Z 2017-05-25T17:53:03Z 2011 Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 72.20.Ee, My, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117628 At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is proved as a whole to be extremely small, negative at low fields and changing its sign when the field increases. In the positive region of the diode magnetoresistance, its field dependence is quadratic at first and then becomes close to the linear one. With increase in the current through the diode, the negative component of the diode magnetoresistance decreases, and the smaller its value, the more extended is the quadratic section and the shorter is the linear one. The results are interpreted as caused by hopping conduction over a system of electron “lakes” in the region of p-n junction. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Negative magnetoresistance of heavily doped silicon p-n junction Article published earlier |
| spellingShingle | Negative magnetoresistance of heavily doped silicon p-n junction Borblik, V.L. Rudnev, I.A. Shwarts, Yu.M. Shwarts, M.M. |
| title | Negative magnetoresistance of heavily doped silicon p-n junction |
| title_full | Negative magnetoresistance of heavily doped silicon p-n junction |
| title_fullStr | Negative magnetoresistance of heavily doped silicon p-n junction |
| title_full_unstemmed | Negative magnetoresistance of heavily doped silicon p-n junction |
| title_short | Negative magnetoresistance of heavily doped silicon p-n junction |
| title_sort | negative magnetoresistance of heavily doped silicon p-n junction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117628 |
| work_keys_str_mv | AT borblikvl negativemagnetoresistanceofheavilydopedsiliconpnjunction AT rudnevia negativemagnetoresistanceofheavilydopedsiliconpnjunction AT shwartsyum negativemagnetoresistanceofheavilydopedsiliconpnjunction AT shwartsmm negativemagnetoresistanceofheavilydopedsiliconpnjunction |