Negative magnetoresistance of heavily doped silicon p-n junction

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117628
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Negative magnetoresistance of heavily doped silicon p-n junction / V.L. Borblik, I.A. Rudnev, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 88-90. — Бібліогр.: 15 назв. — англ.

At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is pro...