Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Katerynchuk, V.M., Kovalyuk, Z.D.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117651
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals / V.M. Katerynchuk, Z.D. Kovalyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 106-108. — Бібліогр.: 4 назв. — англ.

It has been shown that a result of InSe crystal oxidation is formation of an
 intrinsic oxide film that has not insulating but conductive properties. This conductive
 film forms a potential barrier with the semiconductor substrate. Sheet resistance
 measurements of the InSe oxide film in dependence on the oxidation time under various
 temperature conditions were carried out. The resistance was also tested for oxide films
 obtained for two mutually orthogonal crystal faces: perpendicular and parallel to the с
 axis. It has been established that the film sheet resistance is substantially changed only
 for 5 min of the oxidation time, and further oxidation does not affect its value that is
 about 100-150 Ohm/square. Surface topology of InSe intrinsic oxide was studied using
 the atomic-force microscopy method. It was found that this surface becomes
 nanostructured and contains nanoneedles oriented perpendicularly to the plane of sample
 surface. Dynamics of surface topology changes in dependence on temperature-time
 conditions of the oxidation process has been ascertained. It manifests itself in a change of
 lateral and vertical dimensions of nanoneedles as well as their density.