Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals
It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor substrate. Sheet resistance measurements of the InSe oxide film in dependence...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117651 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals / V.M. Katerynchuk, Z.D. Kovalyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 106-108. — Бібліогр.: 4 назв. — англ. |