Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temper...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117655 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633261131366400 |
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| author | Lisovskyy, I.P. Litovchenko, V.G. Zlobin, S.O. Voitovych, M.V. Khatsevich, I.M. Indutnyy, I.Z. Shepeliavyi, P.E. Kolomys, O.F. |
| author_facet | Lisovskyy, I.P. Litovchenko, V.G. Zlobin, S.O. Voitovych, M.V. Khatsevich, I.M. Indutnyy, I.Z. Shepeliavyi, P.E. Kolomys, O.F. |
| citation_txt | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.
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| first_indexed | 2025-11-30T14:40:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117655 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T14:40:40Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lisovskyy, I.P. Litovchenko, V.G. Zlobin, S.O. Voitovych, M.V. Khatsevich, I.M. Indutnyy, I.Z. Shepeliavyi, P.E. Kolomys, O.F. 2017-05-25T18:44:48Z 2017-05-25T18:44:48Z 2011 Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 68.55.Ln, 78.30.Ap, 81.40.Ef https://nasplib.isofts.kiev.ua/handle/123456789/117655 The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films Article published earlier |
| spellingShingle | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films Lisovskyy, I.P. Litovchenko, V.G. Zlobin, S.O. Voitovych, M.V. Khatsevich, I.M. Indutnyy, I.Z. Shepeliavyi, P.E. Kolomys, O.F. |
| title | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films |
| title_full | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films |
| title_fullStr | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films |
| title_full_unstemmed | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films |
| title_short | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films |
| title_sort | effect of low-temperature annealing on light-emitting properties of na-si/siox porous nanocomposite films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117655 |
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