Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temper...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2011
Main Authors: Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117655
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117655
record_format dspace
spelling Lisovskyy, I.P.
Litovchenko, V.G.
Zlobin, S.O.
Voitovych, M.V.
Khatsevich, I.M.
Indutnyy, I.Z.
Shepeliavyi, P.E.
Kolomys, O.F.
2017-05-25T18:44:48Z
2017-05-25T18:44:48Z
2011
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS 68.55.Ln, 78.30.Ap, 81.40.Ef
https://nasplib.isofts.kiev.ua/handle/123456789/117655
The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
spellingShingle Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
Lisovskyy, I.P.
Litovchenko, V.G.
Zlobin, S.O.
Voitovych, M.V.
Khatsevich, I.M.
Indutnyy, I.Z.
Shepeliavyi, P.E.
Kolomys, O.F.
title_short Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
title_full Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
title_fullStr Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
title_full_unstemmed Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
title_sort effect of low-temperature annealing on light-emitting properties of na-si/siox porous nanocomposite films
author Lisovskyy, I.P.
Litovchenko, V.G.
Zlobin, S.O.
Voitovych, M.V.
Khatsevich, I.M.
Indutnyy, I.Z.
Shepeliavyi, P.E.
Kolomys, O.F.
author_facet Lisovskyy, I.P.
Litovchenko, V.G.
Zlobin, S.O.
Voitovych, M.V.
Khatsevich, I.M.
Indutnyy, I.Z.
Shepeliavyi, P.E.
Kolomys, O.F.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117655
citation_txt Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.
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first_indexed 2025-11-30T14:40:40Z
last_indexed 2025-11-30T14:40:40Z
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