The role of multicomponent surface diffusion in growth and doping of silicon nanowires

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• ISSN: 1560-8034
• Hauptverfasser: Efremov, A., Klimovskaya, A., Hourlier, D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117659
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ.

The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly different local mobility, etc.) that take place on the same surface sites and proceed on isolated nano-scaled part of the surface
 belonging to different individual catalyst particle. In this work, the competition for
 unoccupied sites during atomic transport under growth doping and percolation-related
 phenomena on confined parts of surface was treated by the Monte-Carlo simulations.
 Atomistic simulations were compared with numerical kinetic modeling. Arising nonlinear
 effects that finally lead to specific modes of the nanoobject growth, shaping, and
 doping were analyzed. By combining different kinds of simulations and experimental
 results, the proposed strategy provides a better control at atomic scale of nanowire
 growth. Both atomistic and kinetic considerations supplementing each other reveal the
 importance of surface transport and the role of surface immobile contaminations in the
 nanowire growth.