The role of multicomponent surface diffusion in growth and doping of silicon nanowires
The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly differen...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117659 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862679849710125056 |
|---|---|
| author | Efremov, A. Klimovskaya, A. Hourlier, D. |
| author_facet | Efremov, A. Klimovskaya, A. Hourlier, D. |
| citation_txt | The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly different local mobility, etc.) that take place on the same surface sites and proceed on isolated nano-scaled part of the surface
belonging to different individual catalyst particle. In this work, the competition for
unoccupied sites during atomic transport under growth doping and percolation-related
phenomena on confined parts of surface was treated by the Monte-Carlo simulations.
Atomistic simulations were compared with numerical kinetic modeling. Arising nonlinear
effects that finally lead to specific modes of the nanoobject growth, shaping, and
doping were analyzed. By combining different kinds of simulations and experimental
results, the proposed strategy provides a better control at atomic scale of nanowire
growth. Both atomistic and kinetic considerations supplementing each other reveal the
importance of surface transport and the role of surface immobile contaminations in the
nanowire growth.
|
| first_indexed | 2025-12-07T15:44:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117659 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:44:22Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Efremov, A. Klimovskaya, A. Hourlier, D. 2017-05-26T05:43:35Z 2017-05-26T05:43:35Z 2007 The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 68.70.+w, 81.10.-h https://nasplib.isofts.kiev.ua/handle/123456789/117659 The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly different local mobility, etc.) that take place on the same surface sites and proceed on isolated nano-scaled part of the surface
 belonging to different individual catalyst particle. In this work, the competition for
 unoccupied sites during atomic transport under growth doping and percolation-related
 phenomena on confined parts of surface was treated by the Monte-Carlo simulations.
 Atomistic simulations were compared with numerical kinetic modeling. Arising nonlinear
 effects that finally lead to specific modes of the nanoobject growth, shaping, and
 doping were analyzed. By combining different kinds of simulations and experimental
 results, the proposed strategy provides a better control at atomic scale of nanowire
 growth. Both atomistic and kinetic considerations supplementing each other reveal the
 importance of surface transport and the role of surface immobile contaminations in the
 nanowire growth. The authors wish to express their sincere gratitude to Dr. T. Kamins (Hewlett Packard) for helpful discussions. The authors also thank Dr. S. Lukyanets (Institute of Physics, National Academy of Sciences of Ukraine) for discussion of target setting for some of prepared MC simulations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The role of multicomponent surface diffusion in growth and doping of silicon nanowires Article published earlier |
| spellingShingle | The role of multicomponent surface diffusion in growth and doping of silicon nanowires Efremov, A. Klimovskaya, A. Hourlier, D. |
| title | The role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| title_full | The role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| title_fullStr | The role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| title_full_unstemmed | The role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| title_short | The role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| title_sort | role of multicomponent surface diffusion in growth and doping of silicon nanowires |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117659 |
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