The role of multicomponent surface diffusion in growth and doping of silicon nanowires

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Efremov, A., Klimovskaya, A., Hourlier, D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117659
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ.

The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly differen...