Calculation of electron mobility and effect of dislocation scattering in GaN
The electron mobility of GaN has been obtained at various temperatures by the
 relaxation time approximation method. The effect of dislocation scattering has also been
 discussed and calculated alongwith other important scattering mechanisms in this
 material. The results agr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117661 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Calculation of electron mobility and effect
 of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862566931344654336 |
|---|---|
| author | Kundu, J. Sarkar, C.K. Mallick, P.S. |
| author_facet | Kundu, J. Sarkar, C.K. Mallick, P.S. |
| citation_txt | Calculation of electron mobility and effect
 of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The electron mobility of GaN has been obtained at various temperatures by the
relaxation time approximation method. The effect of dislocation scattering has also been
discussed and calculated alongwith other important scattering mechanisms in this
material. The results agree with other available experimental and theoretical data.
|
| first_indexed | 2025-11-26T00:10:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117661 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T00:10:45Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kundu, J. Sarkar, C.K. Mallick, P.S. 2017-05-26T05:49:02Z 2017-05-26T05:49:02Z 2007 Calculation of electron mobility and effect
 of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.20.Dp, 78.35.+c https://nasplib.isofts.kiev.ua/handle/123456789/117661 The electron mobility of GaN has been obtained at various temperatures by the
 relaxation time approximation method. The effect of dislocation scattering has also been
 discussed and calculated alongwith other important scattering mechanisms in this
 material. The results agree with other available experimental and theoretical data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Calculation of electron mobility and effect of dislocation scattering in GaN Article published earlier |
| spellingShingle | Calculation of electron mobility and effect of dislocation scattering in GaN Kundu, J. Sarkar, C.K. Mallick, P.S. |
| title | Calculation of electron mobility and effect of dislocation scattering in GaN |
| title_full | Calculation of electron mobility and effect of dislocation scattering in GaN |
| title_fullStr | Calculation of electron mobility and effect of dislocation scattering in GaN |
| title_full_unstemmed | Calculation of electron mobility and effect of dislocation scattering in GaN |
| title_short | Calculation of electron mobility and effect of dislocation scattering in GaN |
| title_sort | calculation of electron mobility and effect of dislocation scattering in gan |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117661 |
| work_keys_str_mv | AT kunduj calculationofelectronmobilityandeffectofdislocationscatteringingan AT sarkarck calculationofelectronmobilityandeffectofdislocationscatteringingan AT mallickps calculationofelectronmobilityandeffectofdislocationscatteringingan |