Calculation of electron mobility and effect of dislocation scattering in GaN

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Kundu, J., Sarkar, C.K., Mallick, P.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117661
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Calculation of electron mobility and effect
 of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ.

The electron mobility of GaN has been obtained at various temperatures by the
 relaxation time approximation method. The effect of dislocation scattering has also been
 discussed and calculated alongwith other important scattering mechanisms in this
 material. The results agr...