Calculation of electron mobility and effect of dislocation scattering in GaN
The electron mobility of GaN has been obtained at various temperatures by the
 relaxation time approximation method. The effect of dislocation scattering has also been
 discussed and calculated alongwith other important scattering mechanisms in this
 material. The results agr...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117661 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Calculation of electron mobility and effect
 of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. |
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