Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2013
• Автори: Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Movchan, S.P.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117663
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ.

Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.