Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
 using the hot-wall epitaxy technique. The growth details are presented. The carrier
 transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanis...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117663 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Injection current and infrared photosensitivity
 in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
using the hot-wall epitaxy technique. The growth details are presented. The carrier
transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited
current. The photovoltaic response in the long-wave infrared region with the half-peak
cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for
the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.
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| ISSN: | 1560-8034 |