Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
 using the hot-wall epitaxy technique. The growth details are presented. The carrier
 transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanis...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117663 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Injection current and infrared photosensitivity
 in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862622881529200640 |
|---|---|
| author | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
| author_facet | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
| citation_txt | Injection current and infrared photosensitivity
 in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
using the hot-wall epitaxy technique. The growth details are presented. The carrier
transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited
current. The photovoltaic response in the long-wave infrared region with the half-peak
cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for
the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.
|
| first_indexed | 2025-12-07T13:28:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117663 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:28:34Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. 2017-05-26T06:00:07Z 2017-05-26T06:00:07Z 2013 Injection current and infrared photosensitivity
 in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.40.-c, 73.61.Ga, 78.30.Fs https://nasplib.isofts.kiev.ua/handle/123456789/117663 Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
 using the hot-wall epitaxy technique. The growth details are presented. The carrier
 transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited
 current. The photovoltaic response in the long-wave infrared region with the half-peak
 cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for
 the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions Article published earlier |
| spellingShingle | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
| title | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_full | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_fullStr | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_full_unstemmed | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_short | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_sort | injection current and infrared photosensitivity in isotype p-pbte/p-cdte heterojunctions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117663 |
| work_keys_str_mv | AT tetyorkinvv injectioncurrentandinfraredphotosensitivityinisotypeppbtepcdteheterojunctions AT sukachav injectioncurrentandinfraredphotosensitivityinisotypeppbtepcdteheterojunctions AT tkachukai injectioncurrentandinfraredphotosensitivityinisotypeppbtepcdteheterojunctions AT movchansp injectioncurrentandinfraredphotosensitivityinisotypeppbtepcdteheterojunctions |