Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to b...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Movchan, S.P. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117663 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
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