Magnetic field-stimulated change of photovoltage in solar silicon crystals
The effect of static magnetic field (B = 0.17 T) on composition of defects and
 lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this
 work was the character of changes in electrical characteristic of solar silicon. These
 changes are de...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2013 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117665 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Magnetic field-stimulated change of photovoltage
 in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The effect of static magnetic field (B = 0.17 T) on composition of defects and
lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this
work was the character of changes in electrical characteristic of solar silicon. These
changes are dependent on the time elapsed after the magnetic treatment. The results have
been discussed in terms of spin-dependent processes in the subsystem of structural
defects.
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|---|---|
| ISSN: | 1560-8034 |