Magnetic field-stimulated change of photovoltage in solar silicon crystals
The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silicon. These changes are dependent on the time elap...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | Korotchenkov, O.O., Steblenko, L.P., Podolyan, A.O., Kalinichenko, D.V., Tesel’ko, P.O., Kravchenko, V.M., Tkach, N.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117665 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Magnetic field-stimulated change of photovoltage in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ. |
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