Features of piezoresistance in heavily doped n-silicon crystals
It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along th...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117668 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117668 |
|---|---|
| record_format |
dspace |
| spelling |
Gaidar, G.P. 2017-05-26T06:17:42Z 2017-05-26T06:17:42Z 2013 Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 72.10.-d, 72.20.-I, 72.20.Fr https://nasplib.isofts.kiev.ua/handle/123456789/117668 It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K) during the growth of single crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of piezoresistance in heavily doped n-silicon crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Features of piezoresistance in heavily doped n-silicon crystals |
| spellingShingle |
Features of piezoresistance in heavily doped n-silicon crystals Gaidar, G.P. |
| title_short |
Features of piezoresistance in heavily doped n-silicon crystals |
| title_full |
Features of piezoresistance in heavily doped n-silicon crystals |
| title_fullStr |
Features of piezoresistance in heavily doped n-silicon crystals |
| title_full_unstemmed |
Features of piezoresistance in heavily doped n-silicon crystals |
| title_sort |
features of piezoresistance in heavily doped n-silicon crystals |
| author |
Gaidar, G.P. |
| author_facet |
Gaidar, G.P. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
It has been shown that in silicon single crystals heavily doped with arsenic the
presence of the temperature gradient at the interface of the liquid and solid phases in the
process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and
perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant
influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K)
during the growth of single crystals.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117668 |
| citation_txt |
Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT gaidargp featuresofpiezoresistanceinheavilydopednsiliconcrystals |
| first_indexed |
2025-12-07T15:16:34Z |
| last_indexed |
2025-12-07T15:16:34Z |
| _version_ |
1850863092821393408 |