Features of piezoresistance in heavily doped n-silicon crystals
It has been shown that in silicon single crystals heavily doped with arsenic the
 presence of the temperature gradient at the interface of the liquid and solid phases in the
 process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing curre...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2013 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665301375582208 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It has been shown that in silicon single crystals heavily doped with arsenic the
presence of the temperature gradient at the interface of the liquid and solid phases in the
process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and
perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant
influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K)
during the growth of single crystals.
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| first_indexed | 2025-12-07T15:16:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117668 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:16:34Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2017-05-26T06:17:42Z 2017-05-26T06:17:42Z 2013 Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 72.10.-d, 72.20.-I, 72.20.Fr https://nasplib.isofts.kiev.ua/handle/123456789/117668 It has been shown that in silicon single crystals heavily doped with arsenic the
 presence of the temperature gradient at the interface of the liquid and solid phases in the
 process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and
 perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant
 influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K)
 during the growth of single crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of piezoresistance in heavily doped n-silicon crystals Article published earlier |
| spellingShingle | Features of piezoresistance in heavily doped n-silicon crystals Gaidar, G.P. |
| title | Features of piezoresistance in heavily doped n-silicon crystals |
| title_full | Features of piezoresistance in heavily doped n-silicon crystals |
| title_fullStr | Features of piezoresistance in heavily doped n-silicon crystals |
| title_full_unstemmed | Features of piezoresistance in heavily doped n-silicon crystals |
| title_short | Features of piezoresistance in heavily doped n-silicon crystals |
| title_sort | features of piezoresistance in heavily doped n-silicon crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117668 |
| work_keys_str_mv | AT gaidargp featuresofpiezoresistanceinheavilydopednsiliconcrystals |