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Features of piezoresistance in heavily doped n-silicon crystals

It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing curre...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2013
Main Author:	Gaidar, G.P.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/117668
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ.

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