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Features of piezoresistance in heavily doped n-silicon crystals

It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along th...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2013
1. Verfasser:	Gaidar, G.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/117668
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ.

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