Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix
Influence of combined size confinement effect and effect of local laser heating
 on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
 been studied. Increase of the local temperature of Si nanocrystals caused by laser
 illumination with t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Author: | |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117670 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Laser heating effect on Raman spectra of Si nanocrystals
 embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732975105376256 |
|---|---|
| author | Nikolenko, A.S. |
| author_facet | Nikolenko, A.S. |
| citation_txt | Laser heating effect on Raman spectra of Si nanocrystals
 embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Influence of combined size confinement effect and effect of local laser heating
on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
been studied. Increase of the local temperature of Si nanocrystals caused by laser
illumination with the power density up to 10 mW/μm² was estimated from the ratio of
the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local
temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has
been found. The phonon line shape at power densities, when no laser heating effect is
registered, was shown to be described well within the correlation length model of phonon
confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and
broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined.
|
| first_indexed | 2025-12-07T19:34:55Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117670 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:34:55Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nikolenko, A.S. 2017-05-26T06:28:01Z 2017-05-26T06:28:01Z 2013 Laser heating effect on Raman spectra of Si nanocrystals
 embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS 61.46.Hk, 63.22.Kn, 78.30.Am https://nasplib.isofts.kiev.ua/handle/123456789/117670 Influence of combined size confinement effect and effect of local laser heating
 on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
 been studied. Increase of the local temperature of Si nanocrystals caused by laser
 illumination with the power density up to 10 mW/μm² was estimated from the ratio of
 the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local
 temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has
 been found. The phonon line shape at power densities, when no laser heating effect is
 registered, was shown to be described well within the correlation length model of phonon
 confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and
 broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined. Author would like to thanks Dr. Viktor Strelchuk for
 helpful discussion of the results and acknowledge the
 financial support from the State Program of Ukraine
 “Nanotechnologies and Nanomaterials” through the
 Project #3.5.2.6/48. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Article published earlier |
| spellingShingle | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Nikolenko, A.S. |
| title | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_fullStr | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full_unstemmed | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_short | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_sort | laser heating effect on raman spectra of si nanocrystals embedded into siox matrix |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117670 |
| work_keys_str_mv | AT nikolenkoas laserheatingeffectonramanspectraofsinanocrystalsembeddedintosioxmatrix |