Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix
Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature of Si nanocrystals caused by laser illumination with the power density up to 1...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117670 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
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Nikolenko, A.S. 2017-05-26T06:28:01Z 2017-05-26T06:28:01Z 2013 Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS 61.46.Hk, 63.22.Kn, 78.30.Am https://nasplib.isofts.kiev.ua/handle/123456789/117670 Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature of Si nanocrystals caused by laser illumination with the power density up to 10 mW/μm² was estimated from the ratio of the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has been found. The phonon line shape at power densities, when no laser heating effect is registered, was shown to be described well within the correlation length model of phonon confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined. Author would like to thanks Dr. Viktor Strelchuk for helpful discussion of the results and acknowledge the financial support from the State Program of Ukraine “Nanotechnologies and Nanomaterials” through the Project #3.5.2.6/48. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| spellingShingle |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Nikolenko, A.S. |
| title_short |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_fullStr |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full_unstemmed |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_sort |
laser heating effect on raman spectra of si nanocrystals embedded into siox matrix |
| author |
Nikolenko, A.S. |
| author_facet |
Nikolenko, A.S. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Influence of combined size confinement effect and effect of local laser heating
on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
been studied. Increase of the local temperature of Si nanocrystals caused by laser
illumination with the power density up to 10 mW/μm² was estimated from the ratio of
the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local
temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has
been found. The phonon line shape at power densities, when no laser heating effect is
registered, was shown to be described well within the correlation length model of phonon
confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and
broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117670 |
| citation_txt |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
| work_keys_str_mv |
AT nikolenkoas laserheatingeffectonramanspectraofsinanocrystalsembeddedintosioxmatrix |
| first_indexed |
2025-12-07T19:34:55Z |
| last_indexed |
2025-12-07T19:34:55Z |
| _version_ |
1850879346203426816 |