Role of dislocations in formation of ohmic contacts to heavily doped n-Si

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• ISSN: 1560-8034
• Hauptverfasser: Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117675
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Role of dislocations in formation of ohmic contacts
 to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.

We present experimental results concerning a high density of structural defects
 (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
 appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for
 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that
 determine the current flow mechanism in these ohmic contacts. The calculated and
 experimental temperature dependences of contact resistivity, ρс(Т), are in good
 agreement. It is shown that ρс increases with temperature. This is characteristic of a
 model of ohmic contacts with a high dislocation density in the near-contact region of
 semiconductor