Silicon carbide phase transition in as-grown 3C-6H polytypes junction
Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint
 polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K
 and 77 K) photoluminescence. Phase transformation started exactly from lamella
 between polytypes. β → α ( 3...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117681 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Silicon carbide phase transition
 in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695459437412352 |
|---|---|
| author | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| author_facet | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| citation_txt | Silicon carbide phase transition
 in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint
polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K
and 77 K) photoluminescence. Phase transformation started exactly from lamella
between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as
from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by
pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint
polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the
same stacking faults are localized. Luminescence in the disordered α-zone as a result of
phase transformation is represented by a set of intensely pronounced stacking fault
spectra. These spectra reside on more or less intense background band, which are
emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm
appearance of stacking faults which are responsible for metastable intermediate microand
nano-SiC structures. Solid-phase transformations β → α are related with the same
intermediate metastable microstructure that take place in the transformation α → β.
|
| first_indexed | 2025-12-07T16:24:53Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117681 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:24:53Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. 2017-05-26T09:12:16Z 2017-05-26T09:12:16Z 2013 Silicon carbide phase transition
 in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 77.84.Bw, 81.30.-t https://nasplib.isofts.kiev.ua/handle/123456789/117681 Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint
 polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K
 and 77 K) photoluminescence. Phase transformation started exactly from lamella
 between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as
 from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by
 pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint
 polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the
 same stacking faults are localized. Luminescence in the disordered α-zone as a result of
 phase transformation is represented by a set of intensely pronounced stacking fault
 spectra. These spectra reside on more or less intense background band, which are
 emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm
 appearance of stacking faults which are responsible for metastable intermediate microand
 nano-SiC structures. Solid-phase transformations β → α are related with the same
 intermediate metastable microstructure that take place in the transformation α → β. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Silicon carbide phase transition in as-grown 3C-6H polytypes junction Article published earlier |
| spellingShingle | Silicon carbide phase transition in as-grown 3C-6H polytypes junction Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| title | Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_full | Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_fullStr | Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_full_unstemmed | Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_short | Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_sort | silicon carbide phase transition in as-grown 3c-6h polytypes junction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117681 |
| work_keys_str_mv | AT vlaskinasi siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction AT mishinovagn siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction AT vlaskinvi siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction AT svechnikovgs siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction AT rodionovve siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction AT leesw siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction |