Silicon carbide phase transition in as-grown 3C-6H polytypes junction
Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformati...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Zitieren: | Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. |
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Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. 2017-05-26T09:12:16Z 2017-05-26T09:12:16Z 2013 Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 77.84.Bw, 81.30.-t https://nasplib.isofts.kiev.ua/handle/123456789/117681 Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Silicon carbide phase transition in as-grown 3C-6H polytypes junction Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| spellingShingle |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| title_short |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_full |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_fullStr |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_full_unstemmed |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction |
| title_sort |
silicon carbide phase transition in as-grown 3c-6h polytypes junction |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint
polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K
and 77 K) photoluminescence. Phase transformation started exactly from lamella
between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as
from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by
pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint
polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the
same stacking faults are localized. Luminescence in the disordered α-zone as a result of
phase transformation is represented by a set of intensely pronounced stacking fault
spectra. These spectra reside on more or less intense background band, which are
emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm
appearance of stacking faults which are responsible for metastable intermediate microand
nano-SiC structures. Solid-phase transformations β → α are related with the same
intermediate metastable microstructure that take place in the transformation α → β.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117681 |
| citation_txt |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. |
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2025-12-07T16:24:53Z |
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2025-12-07T16:24:53Z |
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