Silicon carbide phase transition in as-grown 3C-6H polytypes junction

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117681
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ.

Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformati...