Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
 void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
 diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
 presented in the form of Q₁ =...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117682 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862708235638669312 |
|---|---|
| author | Kavetskyy, T.S. |
| author_facet | Kavetskyy, T.S. |
| citation_txt | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for
positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R
up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps
components are observed in positron annihilation lifetime spectroscopy.
|
| first_indexed | 2025-12-07T17:09:56Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117682 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:09:56Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kavetskyy, T.S. 2017-05-26T09:18:15Z 2017-05-26T09:18:15Z 2013 Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Fs https://nasplib.isofts.kiev.ua/handle/123456789/117682 Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
 void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
 diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
 presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for
 positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R
 up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps
 components are observed in positron annihilation lifetime spectroscopy. The author would like to thank Prof. Volodymyr
 Tsmots (Drohobych Ivan Franko State Pedagogical
 University) for stimulating discussions. This work is
 supported in part by the State Fund for Fundamental
 Researches of Ukraine (project #F40.2/019). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Article published earlier |
| spellingShingle | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Kavetskyy, T.S. |
| title | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_fullStr | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full_unstemmed | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_short | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_sort | modified correlation equation in the fsdp-related void-based model for as₂s(se)₃ chalcogenide glasses |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117682 |
| work_keys_str_mv | AT kavetskyyts modifiedcorrelationequationinthefsdprelatedvoidbasedmodelforas2sse3chalcogenideglasses |