Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into ac...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117682 |
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| Zitieren: | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
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Kavetskyy, T.S. 2017-05-26T09:18:15Z 2017-05-26T09:18:15Z 2013 Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Fs https://nasplib.isofts.kiev.ua/handle/123456789/117682 Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy. The author would like to thank Prof. Volodymyr Tsmots (Drohobych Ivan Franko State Pedagogical University) for stimulating discussions. This work is supported in part by the State Fund for Fundamental Researches of Ukraine (project #F40.2/019). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| spellingShingle |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses Kavetskyy, T.S. |
| title_short |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_fullStr |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_full_unstemmed |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses |
| title_sort |
modified correlation equation in the fsdp-related void-based model for as₂s(se)₃ chalcogenide glasses |
| author |
Kavetskyy, T.S. |
| author_facet |
Kavetskyy, T.S. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for
positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R
up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps
components are observed in positron annihilation lifetime spectroscopy.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117682 |
| citation_txt |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. |
| work_keys_str_mv |
AT kavetskyyts modifiedcorrelationequationinthefsdprelatedvoidbasedmodelforas2sse3chalcogenideglasses |
| first_indexed |
2025-12-07T17:09:56Z |
| last_indexed |
2025-12-07T17:09:56Z |
| _version_ |
1850870225390534656 |