Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Tomashyk, V.M., Kravtsova, A.S., Tomashyk, Z.F., Stratiychuk, I.B., Galkin, S.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117683
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optimization of conditions for treatment of ZnSe crystal surfaces
 by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ.

The process of chemical polishing the undoped and doped ZnSe crystals
 surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
 polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
 Surface states after chemical etching have been established using electron and atomic
 force microscopies, and it was shown that the surface state is improved after chemical
 etching. Etchant selection to develop slow polishing compositions for chemicalmechanical
 polishing the investigated materials has been made. Concentration regions of
 polishing solutions have been found for various types of ZnSe surface treatment: to
 remove the damaged layer, to control the etching rate, to obtain samples of a given
 thickness.