Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
The process of chemical polishing the undoped and doped ZnSe crystals
 surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
 polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
 Surface states after chemical etching h...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2013 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117683 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of conditions for treatment of ZnSe crystal surfaces
 by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706166794027008 |
|---|---|
| author | Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| author_facet | Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| citation_txt | Optimization of conditions for treatment of ZnSe crystal surfaces
 by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The process of chemical polishing the undoped and doped ZnSe crystals
surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
Surface states after chemical etching have been established using electron and atomic
force microscopies, and it was shown that the surface state is improved after chemical
etching. Etchant selection to develop slow polishing compositions for chemicalmechanical
polishing the investigated materials has been made. Concentration regions of
polishing solutions have been found for various types of ZnSe surface treatment: to
remove the damaged layer, to control the etching rate, to obtain samples of a given
thickness.
|
| first_indexed | 2025-12-07T16:58:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117683 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:58:26Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. 2017-05-26T09:19:12Z 2017-05-26T09:19:12Z 2013 Optimization of conditions for treatment of ZnSe crystal surfaces
 by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 81.65.Cf https://nasplib.isofts.kiev.ua/handle/123456789/117683 The process of chemical polishing the undoped and doped ZnSe crystals
 surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
 polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
 Surface states after chemical etching have been established using electron and atomic
 force microscopies, and it was shown that the surface state is improved after chemical
 etching. Etchant selection to develop slow polishing compositions for chemicalmechanical
 polishing the investigated materials has been made. Concentration regions of
 polishing solutions have been found for various types of ZnSe surface treatment: to
 remove the damaged layer, to control the etching rate, to obtain samples of a given
 thickness. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Article published earlier |
| spellingShingle | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| title | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_fullStr | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full_unstemmed | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_short | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_sort | optimization of conditions for treatment of znse crystal surfaces by chemical etching |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117683 |
| work_keys_str_mv | AT tomashykvm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT kravtsovaas optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT tomashykzf optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT stratiychukib optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT galkinsm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching |